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30C02SS

Description
RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, NPN, ULTRA SMALL, SSFP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size30KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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30C02SS Overview

RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, NPN, ULTRA SMALL, SSFP, 3 PIN

30C02SS Parametric

Parameter NameAttribute value
Objectid1982539232
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)540 MHz
Ordering number : ENN7367
30C02SS
NPN Epitaxial Planar Silicon Transistor
30C02SS
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm
2159A
[30C02SS]
Top View
1.4
0.3
Low-frequency Amplifier, high-speed switching,
small motor drive.
Features
Side View
0.1
0.3
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
0.25
3
0.8
1.4
1
0.45
0.2
2
Bottom View
0.07
0.07
Side View
0.6
3
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
2
1
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a glass-epoxy board (20!30!1.6mm)
Conditions
Ratings
Unit
40
30
5
600
1.2
200
150
V
V
V
mA
A
mW
°C
°C
-
-55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=30V, IE=0
VEB=4V, IC=0
VCE=2V, IC=50mA
VCE=10V, IC=50mA
300
540
Conditions
Ratings
min
typ
max
100
100
800
MHz
Unit
nA
nA
Marking : YM
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2203 TS IM No.7367-1/4

30C02SS Related Products

30C02SS ENN7367
Description RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, NPN, ULTRA SMALL, SSFP, 3 PIN Low-Frequency General-Purpose Amplifier Applications

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