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D1251S45TXPSA1

Description
DIODE GEN PURP 4.5KV 1530A
CategoryDiscrete semiconductor    diode   
File Size31KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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D1251S45TXPSA1 Overview

DIODE GEN PURP 4.5KV 1530A

D1251S45TXPSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time36 weeks
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current18000 A
Number of components1
Phase1
Number of terminals2
Maximum output current1530 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage4500 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
European Power-
Semiconductor and
Electronics Company
Marketing Information
D 1251 S 45 T
75
C
77 max.
48
-0.1
14
+-0.5
A
2 center holes
3.5
×
1.8
VWK January

D1251S45TXPSA1 Related Products

D1251S45TXPSA1
Description DIODE GEN PURP 4.5KV 1530A
Is it Rohs certified? conform to
Reach Compliance Code compliant
ECCN code EAR99
Factory Lead Time 36 weeks
application GENERAL PURPOSE
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JESD-30 code O-CEDB-N2
Maximum non-repetitive peak forward current 18000 A
Number of components 1
Phase 1
Number of terminals 2
Maximum output current 1530 A
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape ROUND
Package form DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Maximum repetitive peak reverse voltage 4500 V
surface mount YES
Terminal form NO LEAD
Terminal location END
Maximum time at peak reflow temperature NOT SPECIFIED
Base Number Matches 1
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