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MMSS8550-L-TP

Description
TRANS PNP 25V 1.5A SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size171KB,2 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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MMSS8550-L-TP Overview

TRANS PNP 25V 1.5A SOT-23

MMSS8550-L-TP Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)1.5A
Voltage - collector-emitter breakdown (maximum)25V
Vce saturation value (maximum value) when different Ib,Ic500mV @ 80mA,800mA
Current - collector cutoff (maximum)100nA
DC current gain (hFE) at different Ic, Vce (minimum value)120 @ 100mA,1V
Power - Max625mW
Frequency - Transition100MHz
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSOT-23
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMSS8550-L
MMSS8550-H
Features
Halogen
free available upon request by adding suffix "-HF"
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Marking:Y2
Capable of 0.625Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Parameter
Collector-Base Breakdown Voltage
(I
C
=100μAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100μAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
DC Current Gain
(I
C
=800mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=800mAdc, I
B
=80mAdc)
Base-Emitter Saturation Voltage
(I
C
=800mAdc, I
B
=80mAdc)
Base- Emitter Voltage
(I
E
=1.5Adc)
Transistor Frequency
(I
C
=50mAdc, V
CE
=10Vdc, f=30MHz)
Min
40
25
6.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
C
B
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
Vdc
B
E
Vdc
F
E
μAdc
μAdc
μAdc
G
H
J
K
DIMENSIONS
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
120
40
---
---
---
350
---
0.5
1.2
1.6
---
---
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
100
---
MHz
.035
.900
Suggested Solder
Pad Layout
.031
.800
.079
2.000
inches
mm
CLASSIFICATION OF H
FE (1)
Rank
Range
L
120-200
H
200-350
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of 2
2013/01/01

MMSS8550-L-TP Related Products

MMSS8550-L-TP MMSS8550-H-TP
Description TRANS PNP 25V 1.5A SOT-23 TRANS PNP 25V 1.5A SOT23
Transistor type PNP PNP
Current - Collector (Ic) (Maximum) 1.5A 1.5A
Voltage - collector-emitter breakdown (maximum) 25V 25V
Vce saturation value (maximum value) when different Ib,Ic 500mV @ 80mA,800mA 500mV @ 80mA,800mA
Current - collector cutoff (maximum) 100nA 100nA
DC current gain (hFE) at different Ic, Vce (minimum value) 120 @ 100mA,1V 120 @ 100mA,1V
Power - Max 625mW 625mW
Frequency - Transition 100MHz 100MHz
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount surface mount
Package/casing TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3
Supplier device packaging SOT-23 SOT-23

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