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BC807-40-TP

Description
TRANS PNP 45V 0.5A SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size281KB,3 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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BC807-40-TP Overview

TRANS PNP 45V 0.5A SOT-23

BC807-40-TP Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)500mA
Voltage - collector-emitter breakdown (maximum)45V
Vce saturation value (maximum value) when different Ib,Ic700mV @ 50mA,500mA
Current - collector cutoff (maximum)200nA
DC current gain (hFE) at different Ic, Vce (minimum value)250 @ 100mA,1V
Power - Max300mW
Frequency - Transition100MHz
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSOT-23
MCC
Micro Commercial Components
R
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
BC807-16
BC807-25
BC807-40
PNP Silicon
General Purpose
Transistors
SOT-23
A
D
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 0.3Watts of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Mechanical Data
Case: SOT-23 Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approx.)
Device Marking:
BC807-16
5A
BC807-25
5B
BC807-40
5C
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=1.0µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=45Vdc,I
E
=0)
Collector Cutoff Current
(V
CE
=40V dc,I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
BC807-16
BC807-25
BC807-40
DC Current Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc,I
B
=50mAdc)
T
A
= 25°C
3
C
B
C
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Min
45
50
5.0
---
---
---
Max
---
---
---
0.1
0.2
0.1
Units
G
H
J
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
K
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
µAdc
µAdc
µAdc
ON CHARACTERISTICS
h
FE(1)
Suggested Solder
Pad Layout
100
160
250
40
---
---
---
250
400
600
---
0.7
1.2
403
---
---
---
---
Vdc
Vdc
°C/W
.037
.950
.037
.950
.031
.800
.035
.900
.079
2.000
inches
mm
h
FE(2)
V
CE(sat)
V
BE(sat)
R
θJA
SMALL SIGNAL CHARACTERISTICS
f
T
Current-Gain-Bandwidth Product
(V
CE
=5.0V, f=100MHz, I
C
=10mA)
100
---
MHz
www.mccsemi.com
Revision: D
1
of 3
2013/06/04

BC807-40-TP Related Products

BC807-40-TP BC807-25-TP BC807-16-TP
Description TRANS PNP 45V 0.5A SOT-23 TRANS PNP 45V 0.5A SOT-23 TRANS PNP 45V 0.5A SOT-23
Transistor type PNP PNP PNP
Current - Collector (Ic) (Maximum) 500mA 500mA 500mA
Voltage - collector-emitter breakdown (maximum) 45V 45V 45V
Vce saturation value (maximum value) when different Ib,Ic 700mV @ 50mA,500mA 700mV @ 50mA,500mA 700mV @ 50mA,500mA
Current - collector cutoff (maximum) 200nA 200nA 200nA
DC current gain (hFE) at different Ic, Vce (minimum value) 250 @ 100mA,1V 160 @ 100mA,1V 100 @ 100mA,1V
Power - Max 300mW 300mW 300mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount surface mount surface mount
Package/casing TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3 TO-236-3,SC-59,SOT-23-3
Supplier device packaging SOT-23 SOT-23 SOT-23

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