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DF3A6.8LFV,L3F

Description
TVS DIODE 5V VESM
CategoryCircuit protection   
File Size130KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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DF3A6.8LFV,L3F Overview

TVS DIODE 5V VESM

DF3A6.8LFV,L3F Parametric

Parameter NameAttribute value
typeZina
One way channel2
Voltage - Reverse OFF (Typical)5V
Voltage - Breakdown (minimum)6.5V
电压 - 箝位(最大值)@ Ipp-
Current - Peak Pulse (10/1000µs)-
Power - Peak Pulse-
Power line protectionnone
applicationUniversal
Capacitance at different frequencies6pF @ 1MHz
Operating temperature-
Installation typesurface mount
Package/casingSOT-723
Supplier device packagingVESM
DF3A6.8LFV
TOSHIBA Diodes for Protecting against ESD
DF3A6.8LFV
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
0.22±0.05
1.2±0.05
0.8±0.05
0.32±0.05
0.13±0.05
1. CATHODE1
2. CATHODE2
3. ANODE
Unit: mm
1.2±0.05
0.8±0.05
0.4
The mounting of two devices in an ultra-compact package enables a
reduction in the number of parts and in the mounting cost.
Low terminal capacitance: C
T
= 6.0 pF (typ.)
0.4
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
150*
150
−55
to 150
Unit
mW
°C
°C
VESM
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-1Q1B
reliability significantly even if the operating conditions (i.e.
Weight: 1.5 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
0.5mm
0.45mm
0.45mm
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between cathode and anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
6.5
Typ.
6.8
6.0
Max
7.1
50
0.5
Unit
V
Ω
μA
pF
Start of commercial production
0.5±0.05
2005-05
1
2014-03-01

DF3A6.8LFV,L3F Related Products

DF3A6.8LFV,L3F DF3A6.8LFV(TPL3Z)
Description TVS DIODE 5V VESM Zener Diode

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