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DF3D36FU,LF

Description
TVS DIODE 28V USM
CategoryCircuit protection   
File Size488KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF3D36FU,LF Overview

TVS DIODE 28V USM

DF3D36FU,LF Parametric

Parameter NameAttribute value
type-
two-way channel2
Voltage - Reverse OFF (Typical)28V
Voltage - Breakdown (minimum)32V
电压 - 箝位(最大值)@ Ipp-
Current - Peak Pulse (10/1000µs)-
Power - Peak Pulse-
Power line protectionnone
applicationAutomotive grade
Capacitance at different frequencies7pF @ 1MHz
Operating temperature-
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingUSM
DF3D36FU
ESD Protection Diodes
Silicon Epitaxial Planar
DF3D36FU
1. Applications
ESD Protection
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
Note:
2. Features
(1)
AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3. Packaging and Internal Circuit
1: Pin 1
2: Pin 2
3: GND
USM
Start of commercial production
©2016-2017
Toshiba Electronic Devices & Storage Corporation
1
2016-03
2017-12-22
Rev.3.0
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