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30BQ100TR

Description
DIODE SCHOTTKY 100V SMC
Categorysemiconductor    Discrete semiconductor   
File Size293KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
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30BQ100TR Overview

DIODE SCHOTTKY 100V SMC

30BQ100TR Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)-
Voltage at different If - Forward (Vf790mV @ 3A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current500µA @ 100V
Capacitance at different Vr, F115pF @ 5V,1MHz
Installation typesurface mount
Package/casingDO-214AB,SMC
Supplier device packagingSMC
Operating Temperature - Junction-55°C ~ 175°C
30BQ100
Technical Data
Data Sheet N0676, Rev. A
30BQ100 SCHOTTKY RECTIFIER
Features
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SMC
Circuit Diagram
Applications
Disk Drives
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
Battery Charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @T
C
=148°C,
rectangular wave form
8.3 ms, half Sine pulse, T
C
=25°C
Max.
100
3.0
120
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Symbol
V
F1
V
F2
Reverse Current*
Junction Capacitance
Series Inductance
* Pulse width < 300 µs, duty cycle < 2%
I
R1
I
R2
C
T
L
S
dv/dt
Voltage Rate of Change
Condition
@ 3 A, Pulse, T
J
= 25 °C
@ 6 A, Pulse, T
J
= 25 °C
@ 3 A, Pulse, T
J
= 125 °C
@ 6 A, Pulse, T
J
= 125°C
@V
R
= Rated V
R
, Pulse, T
J
= 25 °C
@V
R
= Rated V
R
, Pulse, T
J
= 100 °C
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.76
-
0.60
-
0.0001
0.04
80
3.0
-
Max.
0.79
0.90
0.62
0.70
0.5
5
115
-
10,000
Units
V
V
mA
mA
pF
nH
V/s
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

30BQ100TR Related Products

30BQ100TR
Description DIODE SCHOTTKY 100V SMC
Diode type Schottky
Voltage - DC Reverse (Vr) (Maximum) 100V
Voltage at different If - Forward (Vf 790mV @ 3A
speed Fast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current 500µA @ 100V
Capacitance at different Vr, F 115pF @ 5V,1MHz
Installation type surface mount
Package/casing DO-214AB,SMC
Supplier device packaging SMC
Operating Temperature - Junction -55°C ~ 175°C

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