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EGF1B-1HE3/67A

Description
DIODE GEN PURP 100V 1A DO214BA
Categorysemiconductor    Discrete semiconductor   
File Size77KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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EGF1B-1HE3/67A Overview

DIODE GEN PURP 100V 1A DO214BA

EGF1B-1HE3/67A Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)50ns
Current at different Vr - Reverse leakage current5µA @ 100V
Capacitance at different Vr, F15pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-214BA
Supplier device packagingDO-214BA(GF1)
Operating Temperature - Junction-65°C ~ 175°C
EGF1A, EGF1B, EGF1C, EGF1D
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
Superectifier
®
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
GF1 (DO-214BA)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
1.0 A
50 V, 100 V, 150 V, 200 V
30 A
50 ns
1.0 V
175 °C
GF1 (DO-214BA)
Single
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case:
GF1 (DO-214BA), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
EGF1A
EA
50
35
50
EGF1B
EB
100
70
100
1.0
30
-65 to +175
EGF1C
EC
150
105
150
EGF1D
ED
200
140
200
V
V
V
A
A
°C
UNIT
Revision: 25-Aug-17
Document Number: 88579
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

EGF1B-1HE3/67A Related Products

EGF1B-1HE3/67A EGF1B-1HE3/5CA EGF1D-2HE3/67A
Description DIODE GEN PURP 100V 1A DO214BA DIODE GEN PURP 100V 1A DO214BA DIODE GEN PURP 200V 1A DO214BA
Diode type standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 100V 100V 200V
Current - average rectification (Io) 1A 1A 1A
Voltage at different If - Forward (Vf 1V @ 1A 1V @ 1A 1V @ 1A
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 50ns 50ns 50ns
Current at different Vr - Reverse leakage current 5µA @ 100V 5µA @ 100V 5µA @ 200V
Capacitance at different Vr, F 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz
Installation type surface mount surface mount surface mount
Package/casing DO-214BA DO-214BA DO-214BA
Supplier device packaging DO-214BA(GF1) DO-214BA(GF1) DO-214BA(GF1)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
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