16GB (x72, ECC DR) 260-Pin DDR4 SODIMM
Features
DDR4 SDRAM SODIMM
MTA18ASF2G72HZ – 16GB
Features
• DDR4 functionality and operations supported as
defined in the component data sheet
• 260-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC4-3200, PC4-2666 or
PC4-2400
• 16GB (2 Gig x 72)
• V
DD
= 1.20V (NOM)
• V
PP
= 2.5V (NOM)
• V
DDSPD
= 2.5V (NOM)
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die V
REFDQ
generation and calibration
• Dual-rank
• On-board I
2
C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1: 260-Pin SODIMM (MO-310 R/C H)
Module Height: 30mm (1.181in)
Figure 2: 260-Pin SODIMM (MO-310 R/C G1)
Module Height: 30mm (1.181 in)
Options
• Operating temperature
– Commercial
(0°C
≤
T
OPER
≤
95°C)
• Package
– 260-pin DIMM (halogen-free)
• Frequency/CAS latency
– 0.62ns @ CL = 22 (DDR4-3200)
– 0.75ns @ CL = 19 (DDR4-2666)
– 0.83ns @ CL = 17 (DDR4-2400)
Marking
None
Z
-3G2
-2G6
-2G3
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
PC4-
24
22/
21
3200/
–
t
RCD
t
RP
t
RC
Speed
Grade
20
19
18
2400
17
16
15
14
13
12
11
10
9
–
(ns)
(ns)
(ns)
-3G2 3200 3200
2666 2666
2400 2133 2133 1866 1866 1600 1600 1333
13.75 13.75 45.75
CCMTD-1725822587-9881
asf18c2gx72hz.pdf – Rev. H 4/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
16GB (x72, ECC DR) 260-Pin DDR4 SODIMM
Features
Table 1: Key Timing Parameters (Continued)
Data Rate (MT/s)
CL =
PC4-
24
–
–
–
–
22/
21
2933/
2933
–
–
–
t
RCD
t
RP
t
RC
Speed
Grade
20
19
18
2400
2400
2400
–
17
16
15
14
13
12
11
10
9
–
–
–
(ns)
(ns)
(ns)
-2G9 2933
-2G6 2666
-2G3 2400
-2G1 2133
2666 2666
2666 2666
–
–
–
–
2400 2133 2133 1866 1866 1600 1600 1333
2400 2133 2133 1866 1866 1600 1600 1333
2400 2133 2133 1866 1866 1600 1600 1333
–
14.32 14.32 46.32
14.16 14.16 46.16
14.16 14.16 46.16
13.5
46.5
2133 2133 1866 1866 1600 1600 1333 1333 13.5
Table 2: Addressing
Parameter
Row address
Column address
Device bank group address
Device bank address per group
Device configuration
Module rank address
16GB
64K A[15:0]
1K A[9:0]
4 BG[1:0]
4 BA[1:0]
8Gb (1Gig x 8), 16 banks
CS_n[1:0]
Table 3: Part Numbers and Timing Parameters – 16GB Modules
Base device: MT40A1G8,
1
8Gb DDR4 SDRAM
Module
2
Part Number
Density
MTA18ASF2G72HZ-3G2__
MTA18ASF2G72HZ-2G6__
MTA18ASF2G72HZ-2G3__
Notes:
16GB
16GB
16GB
Module
Bandwidth
25.6 GB/s
21.3 GB/s
19.2 GB/s
Memory Clock/
Data Rate
0.625ns/3200
MT/s
0.75ns/2666 MT/s
0.83ns/2400 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
22-22-22
19-19-19
17-17-17
Configuration
2 Gig x 72
2 Gig x 72
2 Gig x 72
1. The data sheet for the base device can be found on micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA18ASF2G72HZ-3G2E1.
CCMTD-1725822587-9881
asf18c2gx72hz.pdf – Rev. H 4/18 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
16GB (x72, ECC DR) 260-Pin DDR4 SODIMM
Features
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CCMTD-1725822587-9881
asf18c2gx72hz.pdf – Rev. H 4/18 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
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