Rev 0; 1/05
DS2065W 3.3V Single-Piece 8Mb
Nonvolatile SRAM
General Description
The DS2065W is a 8Mb reflowable nonvolatile (NV)
SRAM, which consists of a static RAM (SRAM), an NV
controller, and an internal rechargeable manganese
lithium (ML) battery. These components are encased in
a surface-mount module with a 256-ball BGA footprint.
Whenever V
CC
is applied to the module, it recharges the
ML battery, powers the SRAM from the external power
source, and allows the contents of the SRAM to be mod-
ified. When V
CC
is powered down or out-of-tolerance,
the controller write-protects the SRAM’s contents and
powers the SRAM from the battery. The DS2065W also
contains a power-supply monitor output,
RST,
which can
be used as a CPU supervisor for a microprocessor.
Features
♦
Single-Piece, Reflowable, 27mm
2
PBGA Package
Footprint
♦
Internal ML Battery and Charger
♦
Unconditionally Write-Protects SRAM when V
CC
is Out-of-Tolerance
♦
Automatically Switches to Battery Supply when
V
CC
Power Failures Occur
♦
Internal Power-Supply Monitor Detects Power Fail
Below Nominal V
CC
(3.3V)
♦
Reset Output can be Used as a CPU Supervisor
for a Microprocessor
♦
Industrial Temperature Range (-40°C to +85°C)
♦
UL Recognized
DS2065W
Applications
RAID Systems and Servers
Industrial Controllers
Data-Acquisition Systems
Gaming
POS Terminals
Routers/Switches
Fire Alarms
PLC
Pin Configuration appears at end of data sheet.
Ordering Information
PART
DS2065W-100
TEMP RANGE
-40°C to +85°C
PIN-PACKAGE
256 Ball 27mm
2
BGA Module
SPEED (ns)
100
SUPPLY TOLERANCE (%)
3.3V ±0.3V
Typical Operating Circuit
(CE)
(WR)
(RD)
CE
WE
OE
DS2065W
MICROPROCESSOR
OR DSP
DATA
1024k x 8
NV SRAM
8 BITS
DQ0–7
ADDRESS
20 BITS
A0–19
(INT)
RST
______________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
DS2065W 3.3V Single-Piece 8Mb
Nonvolatile SRAM
DS2065W
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground .................-0.3V to +4.6V
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range ...............................-40°C to +85°C
Soldering Temperature...................See IPC/JEDEC J-STD-020C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(T
A
= -40°C to +85°C.)
PARAMETER
Supply Voltage
Input Logic 1
Input Logic 0
SYMBOL
V
CC
V
IH
V
IL
CONDITIONS
MIN
3.0
2.2
0
TYP
3.3
MAX
3.6
V
CC
0.4
UNITS
V
V
V
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.3V ±0.3V, T
A
= -40°C to +85°C.)
PARAMETER
Input Leakage Current
I/O Leakage Current
Output-Current High
Output-Current Low
Output-Current Low
RST
Standby Current
Operating Current
Write-Protection Voltage
SYMBOL
I
IL
I
IO
I
OH
I
OL
I
OL
RST
I
CCS1
I
CCS2
I
CCO1
V
TP
CE
= V
CC
At 2.4V
At 0.4V
At 0.4V (Note 1)
CE
= 2.2V
CE
= V
CC
- 0.2V
t
RC
= 200ns, outputs open
2.8
2.9
CONDITIONS
MIN
-1.0
-1.0
-1.0
2.0
10.0
0.5
0.2
7
5
50
3.0
TYP
MAX
+1.0
+1.0
UNITS
µA
µA
mA
mA
mA
mA
mA
V
CAPACITANCE
(T
A
= +25°C.)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
OUT
Not tested
Not tested
CONDITIONS
MIN
TYP
7
7
MAX
UNITS
pF
pF
2
_____________________________________________________________________
DS2065W 3.3V Single-Piece 8Mb
Nonvolatile SRAM
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.3V ±0.3V, T
A
= -40°C to +85°C.)
PARAMETER
Read Cycle Time
Access Time
OE
to Output Valid
CE
to Output Valid
OE
or
CE
to Output Active
Output High Impedance from
Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Impedance from
WE
Output Active from
WE
Data Setup Time
Data Hold Time
SYMBOL
t
RC
t
ACC
t
OE
t
CO
t
COE
t
OD
t
OH
t
WC
t
WP
t
AW
t
WR1
t
WR2
t
ODW
t
OEW
t
DS
t
DH1
t
DH2
(Note 4)
(Note 5)
(Note 2)
(Note 2)
(Note 6)
(Note 4)
(Note 5)
5
40
0
20
(Note 3)
(Note 2)
(Note 2)
5
100
75
0
5
20
35
5
35
CONDITIONS
MIN
100
100
50
100
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS2065W
POWER-DOWN/POWER-UP TIMING
(T
A
= -40°C to +85°C.)
PARAMETER
V
CC
Fail Detect to
CE
and
WE
Inactive
V
CC
Slew from V
TP
to 0V
V
CC
Slew from 0V to V
TP
V
CC
Valid to
CE
and
WE
Inactive
V
CC
Valid to End of Write Protection
V
CC
Fail Detect to
RST
Active
V
CC
Valid to
RST
Inactive
SYMBOL
t
PD
t
F
t
R
t
PU
t
REC
t
RPD
t
RPU
(Note 1)
(Note 1)
225
350
CONDITIONS
(Note 7)
150
150
2
125
3.0
525
MIN
TYP
MAX
1.5
UNITS
µs
µs
µs
ms
ms
µs
ms
DATA RETENTION
(T
A
= +25°C.)
PARAMETER
Expected Data-Retention Time (Per Charge)
SYMBOL
t
DR
CONDITIONS
(Note 8)
MIN
2
TYP
3
MAX
UNITS
years
_____________________________________________________________________
3
DS2065W 3.3V Single-Piece 8Mb
Nonvolatile SRAM
Write Cycle 1
DS2065W
t
WC
ADDRESSES
V
IH
V
IL
t
AW
CE
V
IL
t
WP
WE
V
IH
t
ODW
D
OUT
HIGH
IMPEDANCE
t
DS
V
IH
D
IN
V
IL
(SEE NOTES 2, 3, 4, 6, 10–13.)
DATA IN STABLE
V
IL
t
DH1
V
IH
V
IL
V
IL
V
IH
t
OEW
V
IL
t
WR1
V
IH
V
IL
V
IH
V
IL
Write Cycle 2
t
WC
ADDRESSES
V
IH
V
IL
t
AW
t
WP
V
IH
V
IL
V
IL
V
IL
t
WR2
V
IH
V
IL
V
IH
V
IL
CE
V
IH
WE
t
COE
V
IL
t
ODW
V
IL
D
OUT
t
DS
V
IH
D
IN
V
IL
(SEE NOTES 2, 3, 5, 6, 10–13.)
DATA IN STABLE
V
IL
t
DH2
V
IH
_____________________________________________________________________
5
京公网安备 11010802033920号
EEWORLD
