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MAC223FP

Description
Silicon Bidirectional Triode Thyristors
File Size57KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MAC223FP Overview

Silicon Bidirectional Triode Thyristors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC223FP/D
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems,
heater controls, motor controls and power supplies; or wherever full-wave silicon-
gate-controlled devices are needed.
Off-State Voltages to 800 Volts
All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or
Four Modes (MAC223AFP Series)
MAC223FP
Series
MAC223AFP
Series
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
200 thru 800 VOLTS
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TJ = 25° unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4FP, MAC223A4FP
MAC223-6FP, MAC223A6FP
MAC223-8FP, MAC223A8FP
MAC223-10FP, MAC223A10FP
On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C,
preceded and followed by rated current)
Circuit Fusing (t = 8.3 ms)
Peak Gate Power (t
Symbol
VDRM
200
400
600
800
IT(RMS)
ITSM
I2t
25
250
260
20
0.5
2
±10
1500
–40 to +125
–40 to +150
8
Amps
Amps
A2s
Watts
Watt
Amps
Volts
Volts
°C
°C
in. lb.
Value
Unit
Volts
p
2
µs)
Average Gate Power (TC = +80°C, t
p
2
µs)
Peak Gate Voltage (t
p
2
µs)
Peak Gate Current (t
Storage Temperature Range
Mounting Torque
p
8.3 ms)
p
20%)
PGM
PG(AV)
IGM
VGM
V(ISO)
TJ
Tstg
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θCS
R
θJA
Max
1.2
2.2
60
Unit
°C/W
°C/W
°C/W
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1

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