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PMGD370XN

Description
Dual N-channel mTrenchMOS-TM extremely low level FET
CategoryDiscrete semiconductor    The transistor   
File Size74KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PMGD370XN Overview

Dual N-channel mTrenchMOS-TM extremely low level FET

PMGD370XN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum drain current (Abs) (ID)0.74 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.41 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
PMGD370XN
Dual N-channel
µTrenchMOS™
extremely low level FET
MBD128
Rev. 01 — 27 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Surface mounted package
s
Dual device
s
Low on-state resistance
s
Footprint 40% smaller than SOT23
s
Fast switching
s
Low threshold voltage.
1.3 Applications
s
Driver circuits
s
Switching in portable appliances.
1.4 Quick reference data
s
V
DS
30 V
s
P
tot
0.41 W
s
I
D
0.74 A
s
R
DSon
440 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simplified outline and symbol
Description
source (s1)
gate (g1)
drain (d2)
source (s2)
gate (g2)
drain (d1)
s1
1
Top view
2
3
MSA370
Simplified outline
6
5
4
Symbol
d1
d2
g1
s2
g2
MSD901
SOT363 (SC-88)
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