Advanced Power MOSFET
FEATURES
n
Logic-Level Gate Drive
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
Lower Leakage Current : 10
µ
A (Max.) @ V
DS
= 100V
n
Lower R
DS(ON)
: 0.336
Ω
(Typ.)
IRLS510A
BV
DSS
= 100 V
R
DS(on)
= 0.44
Ω
I
D
= 4.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
o
Value
100
4.5
3.1
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
o
20
+
20
_
54
4.5
2.3
6.5
23
0.15
- 55 to +175
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
6.5
62.5
Units
o
C/W
Rev. A
IRLS510A
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Symbol
BV
DSS
∆
BV/ T
J
∆
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
100
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.1
--
--
--
--
--
--
3.2
180
50
20
8
10
17
8
5.5
0.9
3.5
--
--
2.0
100
-100
10
100
0.44
--
235
65
25
25
30
45
25
8
--
--
nC
ns
pF
µ
A
Ω
S
V
V
nA
N-CHANNEL
POWER MOSFET
Test Condition
V
GS
=0V,I
D
=250
µ
A
See Fig 7
V
DS
=V
GS
, I
D
=250µA
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V, T
C
=150 C
V
GS
=5V,I
D
=2.25A
V
DS
=40V,I
D
=2.25A
4
O
4
O
o
o
V/ C I
D
=250
µ
A
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
V
DD
=50V,I
D
=5.6A,
R
G
=12Ω
See Fig 13
V
DS
=80V,V
GS
=5V,
I
D
=5.6A
See Fig 6 & Fig 12
4
5
OO
4
5
OO
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
O
4
O
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
85
0.23
5.6
20
1.5
--
--
A
V
ns
µ
C
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25 C
S
=4.5A,V
GS
=0V
,I
T
J
=25 C
F
=5.6A
,I
di
F
/dt=100A/
µ
s
o
o
4
O
Notes ;
1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
o
2
O
L=4mH, I
AS
=4.5A, V
DD
=25V, R
G
=27Ω, Starting T
J
=25 C
o
3
O
I
SD
< 5.6A, di/dt < 250A/µs, V
DD
< BV
DSS
, Starting T
J
=25 C
4
O
Pulse Test : Pulse Width = 250µs, Duty Cycle < 2%
5
O
Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V
GS
IRLS510A
Fig 2. Transfer Characteristics
1
1
0
1
1
0
Top :
I
D
, Drain Current [A]
I
D
, Drain Current [A]
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
1 5
o
C
7
1
0
0
2
o
C
5
@Nts:
oe
1 V =0V
.
GS
2 V =4 V
.
DS
0
3 2 0
µ
s P l e T s
. 5
us et
6
8
1
0
1
0
0
@Nts:
oe
1 2 0
µ
s P l e T s
. 5
us et
2 T = 2
o
C
.
C
5
1
-1 -1
0
1
0
1
0
0
1
1
0
- 5
o
C
5
1
-1
0
0
2
4
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
08
.
Fig 4. Source-Drain Diode Forward Voltage
I
DR
, Reverse Drain Current [A]
1
1
0
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
06
.
V =5V
GS
04
.
1
0
0
02
.
V =1 V
0
GS
@ N t : T = 2
o
C
oe
J
5
1 5
o
C
7
2
o
C
5
1
-1
0
04
.
06
.
08
.
10
.
12
.
@Nts:
oe
1 V =0V
.
GS
us et
2 2 0
µ
s P l e T s
. 5
14
.
16
.
18
.
20
.
00
.
0
5
1
0
1
5
2
0
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
30
5
C =C +C (C =sotd)
iss gs gd
ds
h r e
C =C +C
oss ds gd
C =C
rss gd
C
iss
20
1
C
oss
10
4
C
rss
7
0
@Nts:
oe
1 V =0V
.
GS
2 f=1Mz
.
H
6
Fig 6. Gate Charge vs. Gate-Source Voltage
V
GS
, Gate-Source Voltage [V]
20
8
Capacitance [pF]
V =2 V
0
DS
V =5 V
0
DS
V =8 V
0
DS
4
2
@Nts:I =56A
oe
.
D
0
0
2
4
6
0
0
1
0
1
1
0
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
IRLS510A
Fig 7. Breakdown Voltage vs. Temperature
12
.
30
.
N-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
Drain-Source Breakdown Voltage
11
.
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
25
.
BV
DSS
, (Normalized)
20
.
10
.
15
.
10
.
@Nts:
oe
1 V =5V
.
GS
2 I =28A
.
D
.
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
20
0
09
.
@Nts:
oe
1 V =0V
.
GS
D
05
.
2 I = 2 0
µ
A
.
5
08
.
-5
7
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
o
10
5
15
7
20
0
00
.
-5
7
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [
o
C]
Fig 9. Max. Safe Operating Area
1
0
2
Fig 10. Max. Drain Current vs. Case Temperature
6
Oeaini Ti Ae
prto n hs ra
i Lmtdb R
s iie y
I
D
, Drain Current [A]
1 0
µ
s
0
1
1
0
1 m
0 s
D
C
1
0
0
@Nts:
oe
1 T = 2
o
C
.
5
C
J
I
D
, Drain Current [A]
DS(on)
5
1m
s
4
3
2
7
2 T = 1 5
o
C
.
3 Snl Ple
. ige us
1
0
-1
1
1
0
0
1
1
0
1
2
0
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature [
o
C]
Fig 11. Thermal Response
Thermal Response
D=0.5
10
0
0.2
0.1
0.05
-1
@ Notes :
1. Z
J C
(t)=4.1
o
C/W Max.
θ
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
θ
J C
(t)
P
DM
t
1
t
2
Z (t) ,
10
0.02
0.01
single pulse
θ
JC
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRLS510A
“ Current Regulator ”
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
GS
Q
g
5V
V
DS
V
GS
DUT
3mA
Q
gs
Q
gd
R
1
Current Sampling (I
G
)
Resistor
R
2
Current Sampling (I
D
)
Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
R
L
V
out
V
in
R
G
DUT
V
in
5V
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
10%
V
out
V
DD
( 0.5 rated V
DS
)
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
L
V
DS
Vary t
p
to obtain
required peak I
D
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
BV
DSS
I
AS
C
V
DD
V
DD
t
p
I
D
R
G
DUT
5V
t
p
I
D
(t)
V
DS
(t)
Time
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