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FQP1N60

Description
MOSFET N-CH 600V 1.2A TO-220
Categorysemiconductor    Discrete semiconductor   
File Size521KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQP1N60 Overview

MOSFET N-CH 600V 1.2A TO-220

FQP1N60 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600V
Current - Continuous Drain (Id) at 25°C1.2A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs11.5 ohms @ 600mA, 10V
Vgs (th) (maximum value) when different Id5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)6nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)150pF @ 25V
FET function-
Power dissipation (maximum)40W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220-3
Package/casingTO-220-3
QFET N-CHANNEL
FQP1N60
FEATURES
BV
DSS
= 600V
Advanced New Design
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 5.0nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 9.3Ω (Typ.)
1
2
3
R
DS(ON)
= 11.5Ω
I
D
= 1.2A
TO-220
1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T
C
= 25°C)
Continuous Drain Current (T
C
= 100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
= 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
y
x
x
z
x
Value
600
1.2
0.76
4.8
±30
50
1.2
4.0
4.5
40
0.32
−55
to +150
°C
300
A
V
mJ
A
mJ
V/ns
W
W/°C
Units
V
A
THERMAL RESISTANCE
Symbol
R
θJC
R
θCS
R
θJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
0.5
Max.
3.13
62.5
°C/W
Units
REV. B
1
©
1999 Fairchild Semiconductor Corporation
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