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FQPF8N60C
— N-Channel QFET
®
MOSFET
November
2013
FQPF8N60C
N-Channel QFET
®
MOSFET
600
V,
7.5
A,
1.2
Ω
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild s proprietary,
planar stripe,
DMOS technology. This advanced
technology has been especially tailored to minimize on-
state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power
factor correction, electronic lamp ballasts based on half
bridge topology.
Features
•
7.5
A, 600 V, R
DS(on)
=
1.2
Ω (Max.) @ V
GS
= 10 V,
I
D
=
3.75
A
• Low
Gate Charge
(Typ.
28
nC)
• Low Crss (Typ.
12
pF)
• 100%
Avalanche Tested
D
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
T
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
C
= 25 C unless otherwise noted.
o
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQPF8N60C
600
7.5 *
4.6 *
30 *
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
230
7.5
14.7
4.5
48
0.38
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
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