Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 96
°C/W
(steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 208
°C/W
(steady state) when mounted on a minimum copper pad on FR-4.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –1.2 A
Voltage
–1.2
(Note 2)
A
V
–0.7
–1.2
FDW256P Rev C1(W)
FDW256P
Typical Characteristics
50
V
GS
= -10V
-6.0V
40
-I
D
, DRAIN CURRENT (A)
-4.5V
-4.0V
2.2
-3.5V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
2
1.8
1.6
1.4
1.2
1
0.8
0
10
20
30
40
50
-I
D
, DRAIN CURRENT (A)
-4.0V
-4.5V
-5.0V
-6.0V
-10V
V
GS
= -3.5V
30
20
-3.0V
10
0
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
R
DS(ON)
ON-RESISTANCE (OHM)
,
1.6
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -8A
V
GS
= -10V
1.4
I
D
= -4.0A
0.04
1.2
0.03
T
A
= 125
o
C
0.02
T
A
= 25
o
C
0.01
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
0
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
50
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5.0V
40
-I
D
, DRAIN CURRENT (A)
125
o
C
30
T
A
=
-55
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
T
A
= 125
o
C
1
25
o
C
0.1
-55
o
C
0.01
20
10
0.001
0
1
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW256P Rev C1(W)
FDW256P
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -8A
8
-20V
CAPACITANCE (pF)
6
V
DS
= -10V
-15V
4000
f = 1 MHz
V
GS
= 0 V
3200
C
ISS
2400
4
1600
C
OSS
800
C
RSS
2
0
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
1ms
R
DS(ON)
LIMIT
10ms
100ms
1s
1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 208
o
C/W
T
A
= 25
o
C
0.01
0.01
DC
10s
50
Figure 8. Capacitance Characteristics.
40
-I
D
, DRAIN CURRENT (A)
10
SINGLE PULSE
R
θ
JA
= 208°C/W
T
A
= 25°C
30
20
0.1
10
0.1
1
10
100
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
R
θJA
(t) = r(t) + R
θJA
o
R
θ
JA
= 208 C/W
P(pk)
0.02
0.01
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW256P Rev C1(W)
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