HUF75631S3S datasheet, PDF - EEWORLD Datasheet

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HUF75631S3S: DescriptionMOSFET N-CH 100V 33A D2PAK; Categorysemiconductor Discrete semiconductor; File Size199KB，10 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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HUF75631S3S Overview

MOSFET N-CH 100V 33A D2PAK

HUF75631S3S Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	33A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	40 milliohms @ 33A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	79nC @ 20V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	1220pF @ 25V
FET function	-
Power dissipation (maximum)	120W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	D²PAK（TO-263AB）
Package/casing	TO-263-3, D²Pak (2-lead + tab), TO-263AB

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HUF75631P3, HUF75631S3ST

Data Sheet

December 2001

33A, 100V, 0.040 Ohm, N-Channel,

UltraFET® Power MOSFETs

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

(FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

Features

• Ultra Low On-Resistance

- r

DS(ON)

= 0.040Ω,

10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

HUF75631P3

HUF75631S3ST

Symbol

Ordering Information

PART NUMBER

HUF75631P3

PACKAGE

TO-220AB

TO-263AB

BRAND

75631P

75631S

HUF75631S3ST

NOTE: When ordering, use the entire part number, e.g.,

HUF75631S3ST.

= 25

C, Unless Otherwise Specified

HUF75631P3

HUF75631S3ST

UNITS

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

= 25

C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T

= 100

C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

NOTE:

1. T

= 25

C to 150

100

±20

Figure 4

Figures 6, 14, 15

120

0.80

-55 to 175

300

260

CAUTION:

Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUF75631P3, HUF75631S3ST Rev. B

HUF75631S3S Related Products

	HUF75631S3S	HUF75631P3
Description	MOSFET N-CH 100V 33A D2PAK	MOSFET N-CH 100V 33A TO-220AB
FET type	N channel	N channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V	100V
Current - Continuous Drain (Id) at 25°C	33A（Tc）	33A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V	10V
Rds On (maximum value) when different Id, Vgs	40 milliohms @ 33A, 10V	40 milliohms @ 33A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	79nC @ 20V	79nC @ 20V
Vgs (maximum value)	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	1220pF @ 25V	1220pF @ 25V
Power dissipation (maximum)	120W（Tc）	120W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）	-55°C ~ 175°C（TJ）
Installation type	surface mount	Through hole
Supplier device packaging	D²PAK（TO-263AB）	TO-220AB
Package/casing	TO-263-3, D²Pak (2-lead + tab), TO-263AB	TO-220-3

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