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ISL9N302AP3

Description
MOSFET N-CH 30V 75A TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size121KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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ISL9N302AP3 Overview

MOSFET N-CH 30V 75A TO-220AB

ISL9N302AP3 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C75A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs2.5 milliohms @ 75A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)300nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)11000pF @ 15V
FET function-
Power dissipation (maximum)345W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220AB
Package/casingTO-220-3
ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
• Fast switching
• r
DS(ON)
= 0.0019
(Typ), V
GS
= 10V
• r
DS(ON)
= 0.0027
(Typ), V
GS
= 4.5V
• Q
g
(Typ) = 110nC, V
GS
= 5V
• Q
gd
(Typ) = 31nC
• C
ISS
(Typ) = 11000pF
Applications
• DC/DC converters
SOURCE
DRAIN
GATE
D
G
DRAIN
(FLANGE)
S
TO-220AB
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Parameter
Ratings
30
±
20
75
75
Figure 4
345
2.3
-55 to 175
Units
V
V
A
A
A
W
W/
o
C
o
C
I
D
P
D
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220
0.43
62
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N302AP
Device
ISL9N302AP3
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002

ISL9N302AP3 Related Products

ISL9N302AP3
Description MOSFET N-CH 30V 75A TO-220AB
FET type N channel
technology MOSFET (metal oxide)
Drain-source voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 75A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V
Rds On (maximum value) when different Id, Vgs 2.5 milliohms @ 75A, 10V
Vgs (th) (maximum value) when different Id 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 300nC @ 10V
Vgs (maximum value) ±20V
Input capacitance (Ciss) at different Vds (maximum value) 11000pF @ 15V
Power dissipation (maximum) 345W(Tc)
Operating temperature -55°C ~ 175°C(TJ)
Installation type Through hole
Supplier device packaging TO-220AB
Package/casing TO-220-3
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