Preliminary data
BSP 316 P
SIPMOS
Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
-100
1.8
-0.68
P-SOT223-4-1
Drain
pin 2/4
Gate
pin1
Source
pin 3
V
Ω
A
Package
BSP 316 P P-SOT223-4-1
Type
Ordering Code
Q67042-S4165
Tape and Reel Information
-
Marking
BSP316P
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-0.68
-0.54
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
-2.72
6
±20
1.8
-55... +150
55/150/56
kV/µs
V
W
°C
Reverse diode dv/dt
I
S
=-0.68A,
V
DS
=-48V, di/dt=-200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2002-07-24
Preliminary data
Thermal Characteristics
Parameter
Characteristics
Symbol
min.
Values
typ.
BSP 316 P
Unit
max.
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJS
R
thJA
-
15
25
K/W
-
-
80
48
115
70
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-100
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-170µA
Zero gate voltage drain current
V
DS
=-100V,
V
GS
=0,
T
j
=25°C
V
DS
=-100V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
1.5
1.4
-0.2
-100
-100
2.3
1.8
nA
Ω
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-0.61A
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-0.68A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-07-24
Preliminary data
BSP 316 P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=-80V,
I
D
=-0.68A,
V
GS
=0 to -10V
V
DD
=-80V,
I
D
=-0.68A
Symbol
Conditions
min.
Values
typ.
1
117
27.7
12
4.7
7.5
67.4
25.9
max.
-
146
34.5
15
7
11.2
101
38.9
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
|V
DS
|≥2*|I
D
|*R
DS(on)max
,
I
D
=-0.54A
V
GS
=0,
V
DS
=-25V,
f=1MHz
0.5
-
-
-
-
-
-
-
S
pF
V
DD
=-50V,
V
GS
=-10V,
I
D
=-0.68A,
R
G
=6Ω
ns
-
-
-
-
-0.2
-1.87
-5.1
-2.7
-0.3
-2.8
-6.4
-
nC
V
(plateau)
V
DD
=-80V,
I
D
=-0.68A
V
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
V
SD
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
GS
=0,
I
F
=-0.68A
V
R
=-50V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
A
=25°C
-
-
-
-
-
-
-
-0.85
44.2
56.3
-0.68 A
-2.72
-1.2
55.3
70.4
V
ns
nC
Page 3
2002-07-24
Preliminary data
BSP 316 P
1 Power dissipation
P
tot
=
f
(TA )
1.9
BSP 316 P
2 Drain current
I
D
=
f
(TA )
parameter: |V
GS
|
≥
10V
BSP 316 P
-0.75
W
1.6
A
-0.6
1.4
-0.55
P
tot
I
D
20
40
60
80
100
120
1.2
1
0.8
0.6
0.4
0.2
0
0
-0.5
-0.45
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A = 25°C
-10
1
BSP 316 P
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP 316 P
K/W
A
t
p = 250.0µs
10
1
D
-10
0
1 ms
DS
=
V
Z
thJA
10
0
D = 0.50
0.20
I
D
/
I
-10
-1
10
-1
single pulse
R
DS
(on
10 ms
)
0.10
0.05
0.02
0.01
DC
-10
-2 -1
-10
-10
0
-10
1
-10
2
V
-10
3
10
-2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
V
DS
Page 4
t
p
2002-07-24
Preliminary data
BSP 316 P
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j =25°C, -V
GS
2.4
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j =25°C, -V
GS
7
A
10V
5V
4.4V
2
3.6V
3.2V
1.8
2.8V
1.6
2.4V
2.2V
1.4
1.2
1
0.8
2
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
1
3
Ω
R
DS(on)
5
-I
D
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
4
V
5
-V
DS
0
0
0.4
0.8
1.2
1.6
A
2.4
-I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS|
≥
2 x |I
D
| x
R
DS(on)max
parameter:
T
j
= 25 °C
3.5
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j =25°C
1.8
A
S
2.5
-I
D
2
0.9
1.5
0.6
1
g
fs
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4.5
1.2
0.3
V
0
0
0.4
0.8
1.2
1.6
2
2.4
A
3.2
-V
GS
Page 5
-I
D
2002-07-24
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