US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module
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US-Lasers: 808nm-5mW - Infrared Laser Diodes and Infrared Diode
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TECHNICAL DATA for LASER MODULE
Barrel Specs:
3/8 - 56 Thread Size
Dia: 10.4mm
Length: 17mm
Collect Specs:
3/8 - 56 Thread Size
4.3mm Aperature
Half Hard Brassbbb
Lens Housing Specs:
3/8 - 56 Thread Size
3.7mm Aperture
7mm Plastic Lens
INFRARED DIODE LASER DATA SHEETS
TECHNICAL DATA for LASER DIODE
Index Guided MQW Structure
Wavelength: 808nm (Typ.)
Optical Power: 5mW CW
Threshold Current: 25mA (Typ.)
Standard Package: 5.6mm
Infrared light output
808nm
ABSOLUTE MAXIMUM RATINGS -
(Tc=25 °C)
Pin Out Diagram - Style A
Optical power output
5mW CW
Package Type
5.6mm
Built-in photo diode for monitoring laser output
Items
Optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Storage temperature
Items
Optical output power
Threshold current
Operating current
Operating voltage
Lasing wavelength
Beam divergence
Beam divergence
Slope Efficiency (mW/mA)
Monitor current
Astigmatism
MTTF
Emitter Size
Emitter Distance to Cap Lens
Structure
1 x 4 Microns
0.3mm
Index Guided
Symbols
Po
Ith
Iop
Vop
8D
θ
F
θ
z
0
Im
As
Min.
-
10
15
1.9
800
8
20
0.1
10
-
Symbols
Po
VLDR
VPDR
Topr
Tstg
Typ.
5
20
25
2.1
808
11
35
0.3
100
11
3000-5,000
hrs.
Max.
-
35
45
2.5
820
15
45
0.6
200
-
Values
5
2
30
-10 ~ +40
-40 ~ +85
Unit
mW
mA
mA
V
nm
deg
deg
µ
A
µ
m
Unit
mW
V
V
°C
°C
Test Condition
-
-
Po=5mW
Po=5mW
Po=5mW
Po=5mW
Po=5mW
-
Po=5mW,Vr=5V
Po=5mW
Po=5mW,NA=0.4
OPTICAL and ELECTRICAL CHARACTERISTICS -
(Tc=25 ºC)
http://www.us-lasers.com/m808nm5m.htm
4/6/2009
Microcontroller MCU
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