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MPF6660RLRA

Description
2000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AE, 3 PIN
CategoryThe transistor   
File Size320KB,34 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MPF6660RLRA Overview

2000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AE, 3 PIN

MPF6660RLRA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC, TO-226AE, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistors
N–Channel — Enhancement
3 DRAIN
2
GATE
1 SOURCE
MPF6659
MPF6660
MPF6661
MAXIMUM RATINGS
Rating
Drain – Source Voltage
Drain – Gate Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp
50
µs)
Drain Current
Continuous(1)
Pulsed(2)
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VDS
VDG
VGS
VGSM
ID
IDM
PD
2.5
20
PD
1.0
8.0
TJ, Tstg
– 55 to +150
Watts
mW/°C
°C
Watts
mW/°C
MPF6659
35
35
MPF6660
60
60
±
20
±
40
2.0
3.0
MPF6661
90
90
Unit
Vdc
Vdc
Vdc
Vpk
Adc
1
2
3
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
Gate–Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
µAdc)
MPF6659
MPF6660
MPF6661
IDSS
IGSS
V(BR)DSX
35
60
90
10
100
µAdc
nAdc
Vdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
MPF6659
MPF6660
MPF6661
MPF6659
MPF6660
MPF6661
VGS(Th)
VDS(on)
0.8
0.9
0.9
1.8
3.0
4.0
1.5
1.5
1.6
0.8
1.4
2.0
Vdc
Vdc
(VGS = 5.0 Vdc, ID = 0.3 Adc)
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%.
v
v
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–93

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