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DF120R12W2H3B27BOMA1

Description
IGBT MODULE 800V 50A
Categorysemiconductor    Discrete semiconductor   
File Size871KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DF120R12W2H3B27BOMA1 Overview

IGBT MODULE 800V 50A

DF120R12W2H3B27BOMA1 Parametric

Parameter NameAttribute value
IGBT type-
Configurationthree phase inverter
Voltage - collector-emitter breakdown (maximum)1200V
Current - Collector (Ic) (Maximum)50A
Power - Max180W
Vce(on) when different Vge,Ic2.4V @ 15V,40A
Current - collector cutoff (maximum)1mA
Input capacitance (Cies) at different Vce2.35nF @ 25V
enterstandard
NTC thermistoryes
Operating temperature-40°C ~ 150°C
Installation typeBase installation
Package/casingmodule
Supplier device packagingmodule
TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
DF120R12W2H3_B27
J
V
CES
= 1200V
I
C nom
= 40A / I
CRM
= 80A
TypischeAnwendungen
• SolarAnwendungen
ElektrischeEigenschaften
• HighSpeedIGBTH3
• NiedrigeSchaltverluste
MechanischeEigenschaften
• 3kVAC1minIsolationsfestigkeit
Al
2
O
3
Substrat mit kleinem thermischen
Widerstand
• IntegrierterNTCTemperaturSensor
• KompaktesDesign
• PressFITVerbindungstechnik
TypicalApplications
• Solarapplications
ElectricalFeatures
• HighspeedIGBTH3
• Lowswitchinglosses
MechanicalFeatures
• 3kVAC1mininsulation
• Al
2
O
3
substratewithlowthermalresistance
• IntegratedNTCtemperaturesensor
• Compactdesign
• PressFITcontacttechnology
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2016-04-04
revision:V3.1
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:CM
approvedby:AKDA
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