®
LCDP1511D
DUAL LINE PROGRAMMABLE TRANSIENT
VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Application Specific Discretes
A.S.D.
TM
FEATURES
Dual line programmable transient suppressor
Wide negative firing voltage range : V
MGL
= -80V
Low dynamic switching voltages : V
FP
and V
DGL
Low gate triggering current : I
GT
= 5mA max
Peak pulse current : I
PP
= 15 A (10/1000
µs)
Holding current : I
H
> 150 mA
DESCRIPTION
The LCDP1511D is a dual line protector which pro-
tects subscriber line interface circuits (SLIC)
against transient overvoltages.
Positive overvoltages are clamped with diodes to-
wards GND, while negative overvoltages are sup-
pressed by thyristors connected to GND. The
breakdown voltage of the thyristors is determined
by the voltage applied to the gate, generally -V
bat
.
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
TIP 1
b
O
so
1
te
le
ro
P
SO8
uc
d
s)
t(
FUNCTIONAL DIAGRAM
8
RING 1
P
e
od
r
s)
t(
uc
GATE
2
7
GND
GATE
3
6
GND
TIP 2
4
5
RING 2
COMPLIES WITH THE
FOLLOWING STANDARDS:
ITU-T K20
VDE0433
VDE0878
IEC1000-4-5
FCC Part 68
Peak Surge
Voltage
(V)
1000
2000
1500
level 2
level 2
1500
800
2500
1000
Voltage
Waveform
(µs)
10/700
10/700
1.2/50
10/700
1.2/50
10/160
10/560
2/10
10/1000
Current
Waveform
(µs)
5/310
5/310
1/20
5/310
8/20
10/160
10/560
2/10
10/1000
Admissible
Ipp
(A)
25
25
40
25
25
30
20
70
15
Necessary
Resistor
(Ω)
-
40
-
-
-
-
5
25
45
1/6
BELLCORE NWT-001089-CORE
September 1999 - Ed:2A
LCDP1511D
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C).
Symbol
I
PP
Parameter
Peak pulse current (see note1)
Value
10/1000µs
5/310µs
2/10µs
t
p
= 10ms
t
p
= 1s
15
25
70
5
3.5
80
80
- 55 to + 150
260
Unit
A
I
FSM
V
MLG
V
MGL
T
stg
T
L
Non repetitive surge peak on-state current
(see note2)
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
Storage temperature range
Lead temperature for soldering during 10s
A
V
°C
Note 1:
Pulse waveform
10 / 1000
µs
5 / 310
µs
2 / 10
µs
tr = 10
µs
tr = 5
µs
tr = 2
µs
tp = 1000
µs
tp = 310
µs
tp = 10
µs
% IPP
100
50
Note 2 :
Maximum current flowing through the 4 wires together.
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient
b
O
0
so
te
le
tr
ro
P
tp
uc
d
s)
t(
°C
P
e
od
r
170
s)
t(
uc
t
Unit
°C/W
Value
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
I
GT
I
H
Parameter
Gate triggering current
Holding current
I
RM
I
RG
Reverse leakage current LINE / GND
Reverse leakage current GATE / LINE
Reverse voltage LINE / GND
Gate triggering voltage
V
RM
V
GT
V
F
V
FP
V
DGL
V
R
V
RM
V
F
I
RM
I
R
I
H
Forward drop voltage LINE / GND
Peak forward voltage
V
DGL
V
GATE
V
RG
C
Dynamic switching voltage GATE / LINE
GATE / GND voltage
Reverse voltage GATE / LINE
Capacitance LINE / GND
I
PP
2/6
LCDP1511D
PARAMETERS RELATED TO THE DIODE LINE / GND
(T
amb
= 25°C)
Symbol
V
F
V
FP
(note 1)
Square pulse : t
p
= 500µs
10/700µs
1.2/50µs
2/10µs
1kV
1.5kV
2.5kV
Test conditions
I
F
= 1A
R
P
= 60Ω
R
P
= 60Ω
R
P
= 245Ω
I
PP
= 10A
I
PP
= 15A
I
PP
= 10A
Max
2
5
10
20
Unit
V
V
note 1 : see test circuit for VFP, RP is the protection resistor located on the line card
PARAMETERS RELATED TO THE PROTECTION THYRISTOR
(T
amb
= 25°C)
Symbol
I
GT
I
H
V
GT
I
RG
V
DGL
Test conditions
V
GND / LINE
= -48V
V
GATE
= -48V (see note 2)
at I
GT
V
RG
= -75V
V
GATE
= -48V (see note 3)
10/700µs
1.2/50µs
2/10µs
1kV
1.5kV
2.5kV
R
P
= 60Ω
R
P
= 60Ω
R
P
=245Ω
I
PP
= 10A
I
PP
= 15A
I
PP
= 10A
Min
Max
5
150
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
note 3 : See test circuit for VDGL
The oscillations with a time duration lower than 50ns are not taken into account
note 2 : see functional holding current test circuit
b
O
so
te
le
r
P
d
o
2.5
5
uc
s)
t(
mA
mA
V
µA
V
Unit
P
e
od
r
7
15
20
s)
t(
uc
PARAMETERS RELATED TO LINE / GND
(T
amb
= 25°C)
Symbol
I
RM
C
Test conditions
Max
5
200
100
Unit
µA
pF
V
GATE / LINE
= -1V
V
RM
= -75V
V
R
= -3V F = 1MHz
V
R
= -48V F = 1MHz
Fig. 1:
Surge peak current versus overload duration.
Fig. 2:
Relative variation of holding current versus
junction temperature.
IH[Tj] / IH[Tj=25°C]
ITSM(A)
7
6
5
4
3
2
1
F=50Hz
Tj initial=25°C
t(s)
0
0.01
0.10
1.00
10.00
100.00
1000.00
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
Tj(°C)
-20
0
20
40
60
80
100
120
3/6
LCDP1511D
FUNCTIONAL HOLDING CURRENT (I
H
) TEST CIRCUIT : GO-NO GO TEST
R
- V
P
V
BAT
= - 48 V
D.U.T.
Surge generator
This is a GO-NO GO test which allows to confirm the holding current (I
H
) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I
H
value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : I
PP
= 15A, 10/1000µs.
- The D.U.T. will come back to the off-state within a duration of 50ms max.
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
(V is defined in unload condition)
P
TEST CIRCUIT FOR V
FP
AND V
DGL
PARAMETERS
b
O
R
2
so
te
le
ro
P
R
4
uc
d
s)
t(
P
e
od
r
s)
t(
uc
TIP
RING
L
R
3
V
P
C
1
R
1
C
2
G ND
Pulse (µs)
t
r
V
p
C
1
C
2
L
R
1
R
2
15
0
R
3
(Ω)
25
25
3
R
4
(Ω)
25
25
3
I
PP
(A)
10
15
10
R
p
(Ω)
60
60
245
t
p
(V)
(µF)
20
1
(nF)
200
33
0
(µH)
0
0
(Ω)
50
76
(Ω)
13
10
2
700
50
10
1000
1.2
1500
2500
10
1.1
1.3
4/6
LCDP1511D
APPLICATION CIRCUIT: PABX line protection
LCDP1511D
PTC or Fuse
-Vbat
R
P
Line 1
Ring relay
protection
Ring
relay
1
SLIC
R
P
PTC or Fuse
-Vbat
PTC or Fuse
R
P
Line 2
Ring relay
protection
Ring
relay
2
PTC or Fuse
APPLICATION CIRCUIT: Line Card protection
od
s)
r
P
t(
Line 1
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
PTC or Fuse
CLP30-200B1
PTC or Fuse
PTC or Fuse
uc
s)
t(
O
-
so
b
R
P
R
P
te
le
ro
P
so
b
LCDP1511D
-O
Ring
relay
1
R
P
te
le
r
P
s)
(
SLIC
t
uc
od
-Vbat
uc
d
s)
t(
SLIC
-Vbat
R
P
Line 2
CLP30-200B1
Ring
relay
2
SLIC
R
P
PTC or Fuse
5/6
京公网安备 11010802033920号
EEWORLD
