C3D16065D
®
Silicon Carbide Schottky Diode
V
RRM
Q
c
=
650 V
22 A**
40 nC**
Z-Rec
Rectifier
Features
I
F
(
T
C
=135˚C)
=
=
Package
•
•
•
•
•
•
•
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on V
F
Benefits
TO-247-3
•
•
•
•
•
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
•
•
•
•
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
C3D16065D
Package
TO-247-3
Marking
C3D16065
Maximum Ratings
(T
C
=25°C unless otherwise specified)
Symbol
V
RRM
V
RSM
V
DC
I
F
Parameter
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current (Per Leg/Device)
Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Power Dissipation (Per Leg)
Diode dV/dt ruggedness
i
2
t value (Per Leg)
Operating Junction and Storage Temperature
TO-247 Mounting Torque
Value
650
650
650
23/46
11/22
8/16
37.5/75
25.5/51
71/142
60/120
650/1300
530/1080
100*
43.5*
200
25
18
-55 to
+175
1
8.8
Unit
V
V
V
A
T
C
=25˚C
T
C
=135˚C
T
C
=150˚C
Test Conditions
Note
Fig. 3
I
FRM
I
FSM
I
FSM
P
tot
dV/dt
∫i
2
dt
T
J
, T
stg
A
A
A
W
V/ns
A
2
s
˚C
Nm
lbf-in
T
C
=25˚C, t
P
= 10 ms, Half Sine Wave
T
C
=110˚C, t
P
= 10 ms, Half Sine Wave
T
C
=25˚C, t
p
= 10 ms, Half Sine Wave
T
C
=110˚C, t
p
= 10 ms, Half Sine Wave
T
C
=25˚C, t
P
= 10 µs, Pulse
T
C
=110˚C, t
P
= 10 µs, Pulse
T
C
=25˚C
T
C
=110˚C
V
R
=0-600V
T
C
=25˚C, t
P
=10 ms
T
C
=110˚C, t
P
=10 ms
Fig. 8
Fig. 8
Fig. 4
M3 Screw
6-32 Screw
*
Per Leg,
**
Per Device
C3D16065D Rev. B, 7-2016
1
Electrical Characteristics (Per Leg)
Symbol
V
F
I
R
Q
C
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Typ.
1.5
2.1
10
12
20
395
37
32
3.0
Max.
1.8
2.4
51
204
Unit
V
μA
nC
Test Conditions
I
F
= 8 A T
J
=25°C
I
F
= 8 A T
J
=175°C
V
R
= 650 V T
J
=25°C
V
R
= 650 V T
J
=175°C
V
R
= 400 V, I
F
= 8A
di/dt
= 500 A/μs
T
J
= 25°C
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V
Note
Fig. 1
Fig. 2
Fig. 5
C
E
C
Total Capacitance
Capacitance Stored Energy
pF
μJ
Fig. 6
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
R
θJC
*
Parameter
Thermal Resistance from Junction to Case
Typ.
1.5 *
0.75 **
Unit
°C/W
Note
Fig. 9
Per Leg,
**
Per Device
Typical Performance (Per Leg)
20
18
16
Foward
I
Current, I
F
(A)
(A)
T
J
= -55 °C
Reverse Leakage Current, I
RR
(mA)
30
25
20
15
10
5
0
0.5
400
1.0
600
1.5
2.0
800 1000
2.5
1200
3.0
3.5
4.0
T
J
= 25 °C
T
J
= 75 °C
T
J
= 125 °C
T
J
= 175 °C
14
12
10
8
6
4
2
0
0.0
200
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
T
J
= -55 °C
I
R
(
m
A)
F
0
0
100 200 300 400 500 600 700 800 900 1000
Foward Voltage, V
F
(V)
V
F
(V)
Figure 1. Forward Characteristics
Reverse
V
R
(V)
V
R
(V)
Voltage,
Figure 2. Reverse Characteristics
2
C3D16065D Rev. B, 7-2016
Typical Performance (Per Leg)
80
70
60
I
F(peak)
(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
120
100
80
P
Tot
(W)
50
40
30
20
10
0
25
50
75
100
T
C
˚C
Figure 3. Current Derating
60
40
20
0
25
50
75
100
T
C
˚C
Figure 4. Power Derating
125
150
175
125
150
175
30
25
Capacitive Charge, Q
C
(nC)
Q
C
(nC)
Conditions:
T
J
= 25 °C
450
400
350
Capacitance (pF)
C (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
20
15
10
5
0
0
100
200
300
400
500
600
700
300
250
200
150
100
50
0
0
1
10
V
R
(V)
Reverse Voltage, V
R
(V)
Reverse Voltage, V
R
(V)
V
R
(V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
100
1000
Figure 6. Capacitance vs. Reverse Voltage
3
C3D16065D Rev. B, 7-2016
Typical Performance (Per Leg)
8
7
Capacitance Stored Energy, E
C
(µJ)
µ
E (
m
J)
1,000
6
5
I
FSM
(A)
I
(A)
FSM
4
3
2
1
0
0
100
200
300
R
100
T
J_initial
= 25 °C
T
J_initial
= 110 °C
C
400
500
600
700
10
10E-6
100E-6
t
p
(s)
Time, t
p
(s)
1E-3
10E-3
Reverse
V (V)
V
R
(V)
Voltage,
Figure 7. Capacitance Stored Energy
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Thermal Resistance (˚C/W)
1
0.5
0.3
0.1
100E-3
0.05
0.02
SinglePulse
10E-3
0.01
1E-3
1E-6
10E-6
100E-6
T (Sec)
1E-3
10E-3
100E-3
1
Figure 9. Transient Thermal Impedance
4
C3D16065D Rev. B, 7-2016
Package Dimensions
Package TO-247-3
POS
A
A1
A2
b
b1
b2
b3
b4
c
D
D1
D2
E
E1
E2
Inches
Min
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
3
.780
.161
.138
.216
.238
9˚
9˚
2˚
2˚
.800
.173
.144
.236
.248
11˚
11˚
8˚
8˚
19.81
4.10
3.51
5.49
6.04
9˚
9˚
2˚
2˚
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
Millimeters
Min
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
1.00
12.38
3
20.32
4.40
3.65
6.00
6.30
11˚
11˚
8˚
8˚
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
e
E3
E4
e
N
L
L1
ØP
Q
S
.214 BSC
5.44 BSC
T
U
V
W
T
U
V
W
Recommended Solder Pad Layout
Part Number
C3D16065D
Package
TO-247-3
Marking
C3D16065
all units are in inches
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C3D16065D Rev. B, 7-2016
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