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SS13LHMTG

Description
DIODE SCHOTTKY 30V 1A SUB SMA
Categorysemiconductor    Discrete semiconductor   
File Size183KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SS13LHMTG Overview

DIODE SCHOTTKY 30V 1A SUB SMA

SS13LHMTG Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)30V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf500mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current400µA @ 30V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingDO-219AB
Supplier device packagingSub SMA
Operating Temperature - Junction-55°C ~ 125°C
SS12L - SS115L
Taiwan Semiconductor
CREAT BY ART
1A, 20 - 150V Surface Mount Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.5A
@ 1.0A
T
J
=25°C
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=100°C
T
J
=125°C
dV/dt
R
θJL
R
θJA
T
J
T
STG
- 55 to +125
I
R
8.0
-
10000
45
100
- 55 to +150
- 55 to +150
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SYMBOL
SS
12L
12L
20
14
20
SS
13L
13L
30
21
30
SS
14L
14L
40
28
40
SS
15L
15L
50
35
50
1
30
SS
16L
16L
60
42
60
SS
19L
19L
90
63
90
SS
10L
100
70
100
SS
A5L
150
105
150
V
V
V
A
A
110L 115L
UNIT
V
F
0.385
0.45
0.43
0.50
0.51
0.55
0.4
6.0
0.58
0.70
0.70
0.80
0.05
-
0.5
0.75
0.90
V
mA
V/μs
°C/W
°C
°C
Document Number: DS_D1409052
Version: P15
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