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CRZ24(TE85L,Q,M)

Description
X35 PB-F DIODE S-FLAT MOQ=3000 V
CategoryDiscrete semiconductor    diode   
File Size431KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

CRZ24(TE85L,Q,M) Overview

X35 PB-F DIODE S-FLAT MOQ=3000 V

CRZ24(TE85L,Q,M) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Factory Lead Time12 weeks
CRY62 to CRZ39
TOSHIBA Zener Diode Silicon Epitaxial Type
CRY62 to CRZ39
Surge absorber
Unit: mm
Average power dissipation
Zener voltage
: P = 0.7 W
: V
Z
= 6.2 to 39 V
Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25
°C
)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
0.7
−40 to 150
−40 to 150
Unit
W
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
3-2A1S
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.013 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Dimensions (reference only)
Unit: mm
1.2
1.2
2.8
Start of commercial production
1999-09
1
2014-10-09

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