DMN1004UFDF
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
Max
4.8mΩ @ V
GS
= 4.5V
12V
7.0mΩ @ V
GS
= 2.5V
12A
I
D
Max
T
A
= +25°
C
15A
Features
0.6mm Profile – Ideal for Low-Profile Applications
PCB Footprint of 4mm
2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.007 grams (Approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
U-DFN2020-6 (Type F)
D
G
ESD PROTECTED
Pin1
Top View
Bottom View
Pin Out
Bottom View
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN1004UFDF-7
DMN1004UFDF-13
Notes:
Case
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
N4
4U
4U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
Feb
2
2018
F
Mar
3
2019
G
Apr
4
2020
H
May
5
Jun
6
YM
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
Oct
O
2024
L
Nov
N
2025
M
Dec
D
DMN1004UFDF
D
atasheet number: DS39159 Rev. 2 - 2
1 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMN1004UFDF
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 4.5V
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
12
±8
15
12
70
3
34
55
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°
C
Steady State
T
A
= +25°
C
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.9
167
2.1
72
22
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
12
—
—
0.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.1
4.5
0.6
2,385
678
520
2.2
26
47
2.8
5.3
5.3
10.7
31.6
16.9
24.3
7.4
Max
—
1
±10
1.0
4.8
7.0
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 9.6V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 15A
V
GS
= 2.5V, I
D
= 10A
V
GS
= 0V, I
S
= 3.2A
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 6V, I
D
= 10A
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
DS
= 6V, I
D
= 5.0A
V
GS
= 4.5V, R
G
= 1.0Ω
I
F
= 2.0A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN1004UFDF
D
atasheet number: DS39159 Rev. 2 - 2
2 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMN1004UFDF
50
45
40
V
GS
= 4.5V
V
GS
= 3.0V
30
V
DS
= 5.0V
I
D
, DRAIN CURRENT (A)
35
30
25
20
15
10
5
0
0
V
GS
= 2.0V
V
GS
= 1.5V
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
25
20
V
GS
= 1.2V
15
T
A
= 150°
C
10
T
A
= 25°
C
T
A
= -55°
C
T
A
= 125°
C
T
A
= 85°
C
5
V
GS
= 0.9V
V
GS
= 1.0V
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
00
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
6.00
30
5.50
25
I
D
= 15A
5.00
V
GS
= 2.5V
20
I
D
= 10A
4.50
V
GS
= 4.5V
15
4.00
10
3.50
5
3.00
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
00
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
5
V
GS
= 4.5V
2
1.8
4
T
A
= 85°
C
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALI ZED)
T
A
= 125°
C
T
A
= 150°
C
V
GS
= 2.5V
1.6
1.4
I
D
= 10A
V
GS
= 4.5V
3
T
A
= 25°
C
1.2
1
0.8
0.6
0.4
-50
I
D
= 15A
T
A
= -55°
C
2
1
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
-25 0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
May 2017
© Diodes Incorporated
DMN1004UFDF
D
atasheet number: DS39159 Rev. 2 - 2
3 of 7
www.diodes.com
DMN1004UFDF
R
DS(ON)
, DRAIN-SOURCE ON-RESI STANCE (
)
0.007
V
GS(th )
, GATE THRESHOLD VOLTAGE (V)
0.8
0.7
0.6
0.5
I
D
= 250µ
A
I
D
= 1mA
0.006
V
GS
= 2.5V
I
D
= 10A
0.005
V
GS
= 4.5V
0.004
I
D
= 15A
0.4
0.3
0.2
0.1
0.003
0.002
0.001
-50 -25
0
25 50
75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
30
0
-50 -25
0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation
vs. Junction Temperature
Figure 8 Gate Threshold Variation
vs. Ambient Temperature
10000
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
25
I
S
, SOURCE CURRENT (A)
C
iss
20
T
A
= 150°
C
T
A
= 125°
C
T
A
= 25°
C
T
A
= -55°
C
15
1000
C
oss
10
T
A
= 85°
C
C
rss
5
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
100
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
12
8
100
R
DS(on)
Limited
P
W
= 100µ
s
V
GS
GATE THRESHOLD VOLTAGE (V)
7
I
D
, DRAIN CURRENT (A)
6
5
4
3
2
1
0
0
10
20
30
40
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
50
V
DS
= 6V
I
D
= 5A
10
DC
P
W
= 10s
1
P
W
= 1s
P
W
= 100ms
0.1
T
J (m ax )
= 150°
C
T
C
= 25°
C
P
W
= 10ms
P
W
= 1ms
0.01
0.01
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMN1004UFDF
D
atasheet number: DS39159 Rev. 2 - 2
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May 2017
© Diodes Incorporated
DMN1004UFDF
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
D = Single Pulse
R
JA
= 72°
C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
0.0001
0.001
DMN1004UFDF
D
atasheet number: DS39159 Rev. 2 - 2
5 of 7
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May 2017
© Diodes Incorporated
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