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NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 50 V)
•
Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
2PB1219A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
1
3
MARKING
TYPE NUMBER
2PB1219AQ
2PB1219AR
2PB1219AS
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
D∗Q
D∗R
D∗S
Fig.1
Simplified outline (SOT323; SC70)
and symbol.
1
Top view
2
MAM048
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to SOT323; SC70 standard mounting conditions.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−60
−50
−5
−500
−1
−200
200
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 Apr 12
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
2PB1219AQ
2PB1219AR
2PB1219AS
h
FE
V
CEsat
V
BEsat
C
c
f
T
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
2PB1219AQ
2PB1219AR
2PB1219AS
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
I
C
=
−500
mA; V
CE
=
−10
V; note 1
I
C
=
−300
mA; I
B
=
−30
mA; note 1
IC =
−300
mA; IB =
−30
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= 50 mA; V
CE
=
−10
V;
f = 100 MHz; note 1
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−150
mA; V
CE
=
−10
V; note 1
85
120
170
40
−
−
−
100
120
140
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
2PB1219A
VALUE
625
UNIT
K/W
MAX.
−100
−5
−100
170
240
340
−
−600
−1.5
15
−
−
−
UNIT
nA
μA
nA
mV
V
pF
MHz
MHz
MHz
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
2PB1219A
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 12
4
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