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RS2GAHM2G

Description
DIODE GEN PURP 400V 1.5A DO214AC
Categorysemiconductor    Discrete semiconductor   
File Size369KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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RS2GAHM2G Overview

DIODE GEN PURP 400V 1.5A DO214AC

RS2GAHM2G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)400V
Current - average rectification (Io)1.5A
Voltage at different If - Forward (Vf1.3V @ 1.5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)150ns
Current at different Vr - Reverse leakage current5µA @ 400V
Capacitance at different Vr, F50pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-214AC,SMA
Supplier device packagingDO-214AC(SMA)
Operating Temperature - Junction-55°C ~ 150°C
RS2AA thru RS2MA
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Fast Recovery Rectifiers
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
150
50
18
55
- 55 to +150
- 55 to +150
O
RS
2AA
50
35
50
RS
2BA
100
70
100
RS
2DA
200
140
200
RS
2GA
400
280
400
1.5
50
1.3
5
200
RS
2JA
600
420
600
RS
800
560
800
RS
1000
700
1000
2KA 2MA
UNIT
V
V
V
A
A
V
μA
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
250
500
ns
pF
C/W
O
O
C
C
Document Number: DS_D1405078
Version: G14
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