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BUK9611-80E,118

Description
MOSFET N-CH 80V 75A D2PAK
CategoryDiscrete semiconductor    The transistor   
File Size719KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK9611-80E,118 Overview

MOSFET N-CH 80V 75A D2PAK

BUK9611-80E,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Codenot_compliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)145 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)327 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9611-80E
5 October 2012
N-channel TrenchMOS logic level FET
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1.3 Applications
12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
80
75
182
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
8.3
11
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 20 A; V
DS
= 64 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
16
-
nC
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