5.0SMDJ16A - 5.0SMDJ100A
Taiwan Semiconductor
5000W, 16V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
5000
watts
peak pulse power capability at 10/1000μs waveform
Ideal for automated placement
Photo glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
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KEY PARAMETERS
PARAMETER
V
WM
V
BR
(uni-directional)
P
PPSM
T
J MAX
Package
Configuration
VALUE
16 - 100
17.8 - 123
5000
175
UNIT
V
V
W
°C
DO-214AB (SMC)
Stacked die
APPLICATIONS
● I/O interface
● AC/DC power supply
●
Automotive
MECHANICAL DATA
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Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight: 0.30 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
(1)
10/1000us waveform
(2)
Steady state power dissipation at T
L
=75°C
Forward Voltage @ I
F
=100A for Uni-directional only
Junction temperature
Storage temperature
Notes:
1.
2.
3.
(3)
SYMBOL
P
PPSM
P
tot
V
F
T
J
T
STG
VALUE
5000
6.25
5
-55 to +175
-55 to +175
UNIT
W
W
V
°C
°C
Non-repetitive Current Pulse Per Fig. 3 and derated above TA=25°C Per Fig. 1
Units mounted on recommended PCB (16mm x 16mm Cu pad test board)
Pulse test with PW=0.3 ms
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
16
61
17
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (16mm x 16mm Cu pad test board)
1
Version:B1708
5.0SMDJ16A - 5.0SMDJ100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Pulse Power or Current vs. Initial Junction
Temperature
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE, %
100
PD - POWER DISSIPATION (W)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
175
T
J
- INITAL TEMPERATURE (°C)
0.0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (
o
C)
Heat sink
16mm x 16mm
Cu pad test board
75
Fig.2 Power Derating Curve
50
25
Fig.3 Pulse Waveform
10000
140
I
PPM
, PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
Half value-I
PPM
/2
10/1000μs, waveform
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
CAPACITANCE (pF)
Fig.4 Typical Junction Capacitance
5.0SMDJ16A
Rise time tr=10μs to 100%
5.0SMDJ51A
1000
as defined by R.E.A.
5.0SMDJ100A
td
100
0.1
1
10
100
REVERSE VOLTAGE (V)
4
Version:B1708
RF/Wirelessly
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