TK42A12N1,S4X datasheet, PDF - EEWORLD Datasheet

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TK42A12N1,S4X: DescriptionMOSFET N-CH 120V 42A TO-220; Categorysemiconductor Discrete semiconductor; File Size234KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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TK42A12N1,S4X Overview

MOSFET N-CH 120V 42A TO-220

TK42A12N1,S4X Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	120V
Current - Continuous Drain (Id) at 25°C	42A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	9.4 milliohms @ 21A, 10V
Vgs (th) (maximum value) when different Id	4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)	52nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	3100pF @ 60V
FET function	-
Power dissipation (maximum)	35W（Tc）
Operating temperature	150°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-220SIS
Package/casing	TO-220-3 whole package

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TK42A12N1

MOSFETs

Silicon N-channel MOS (U-MOS-H)

TK42A12N1

1. Applications

•

Switching Voltage Regulators

2. Features

(1)

(2)

(3)

Low drain-source on-resistance: R

DS(ON)

= 7.8 mΩ (typ.) (V

= 10 V)

Low leakage current: I

DSS

= 10

µA

(max) (V

= 120 V)

Enhancement mode: V

= 2.0 to 4.0 V (V

= 10 V, I

= 1.0 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

TO-220SIS

4. Absolute Maximum Ratings (Note) (T

= 25



unless otherwise specified)

25

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Channel temperature

Storage temperature

(Silicon limit)

= 25)

(t = 1 ms)

= 25)

(Note 3)

(Note 1), (Note 2)

(Note 1)

Symbol

DSS

GSS

stg

Rating

120

±20

167

150

-55 to 150



Unit

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2013-02

2014-02-13

Rev.2.0

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