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BUK7Y29-40EX

Description
MOSFET N-CH 40V 26A LFPAK
Categorysemiconductor    Discrete semiconductor   
File Size759KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BUK7Y29-40EX Overview

MOSFET N-CH 40V 26A LFPAK

BUK7Y29-40EX Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C26A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs29 milliohms @ 5A, 10V
Vgs (th) (maximum value) when different Id4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)7.9nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)492pF @ 25V
FET function-
Power dissipation (maximum)37W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingLFPAK56,Power-SO8
Package/casingSC-100,SOT-669,4-LFPAK
BUK7Y29-40E
7 May 2013
N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175°C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
40
26
37
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
22.7
29
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 5 A; V
DS
= 32 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
3
-
nC
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