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829B

Description
8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size329KB,8 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet View All

829B Overview

8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

830 series
Silicon 25V hyperabrupt varactor diodes
ZC829, ZDC833, ZMV829, ZMDC830 and ZV831
Description
A range of silicon varactor diodes for use in
frequency control and filtering. Featuring
closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase
noise performance. Available in single or dual
common cathode format in a wide rage of
miniature surface mount packages.
SOT23
SOT323
Features
Close tolerance CV characteristics
High tuning ratio
Low I
R
(typically 200pA)
Excellent phase noise performance
High Q
Range of miniature surface mount packages
SOD523
SOD323
Applications
VCXO and TCXO
Wireless communications
Pagers
Mobile radio
Where steeper CV slopes are required there is the 12V hyperabrupt range:
ZC930, ZMV930, ZV930 and ZV931
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
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