JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007
TRANSISTOR（ NPN
）
TO—220
FEATURES
Power dissipation
P
CM
:
2 W（Tamb=25℃）
Collector current
I
CM
:
8
A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
（
1
）
DC current gain
h
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Fall time
Storage time
V
CE
(sat)
V
BE
(sat)
f
T
V
CE
=5 V, I
C
=5A
I
C
=2A,I
B
=0.4A
I
C
=2A, I
B
= 0.4A
Ic=500mA,V
CE
=10V
f=1MH
Z
1.BASE
2.COLLECTOR
3.EMITTER
123
unless
Test
otherwise
specified）
TYP
MAX
UNIT
V
V
V
1
100
8
5
40
30
1
1.2
4
80
0.7
3
V
V
MH
Z
mA
µA
conditions
MIN
700
400
9
Ic= 1mA，I
E
=0
Ic= 10m A，I
B
=0
I
E
= 1mA，I
C
=0
V
CB
= 700V， I
E
=0
V
EB
= 9 V， I
C
=0
V
CE
= 5V, I
C
= 2 A
C
ob
t
f
t
s
V
CE
=10,I
E
=0，
f=0.1MHz
Vcc=125V, Ic=5A
I
B1
=-I
B2
=1A
pF
µs
µs
CLASSIFICATION OF h
FE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
FPGA/CPLD
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