DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D102
BAP50-05W
General purpose PIN diode
Product specification
Supersedes data of 2001 Mar 02
2001 Apr 17
NXP Semiconductors
Product specification
General purpose PIN diode
FEATURES
Two elements in common cathode configuration in a
small-sized plastic SMD package
Low diode capacitance
Low diode forward resistance.
APPLICATIONS
General RF applications.
handbook, halfpage
BAP50-05W
PINNING
PIN
1
2
3
DESCRIPTION
anode
anode
common cathode
3
3
DESCRIPTION
1
2
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
1
Top view
2
MAM382
Marking code:
W4-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
C
65
65
50
50
240
+150
+150
V
mA
mW
C
C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Apr 17
2
NXP Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
Per diode
V
F
V
R
I
R
C
d
forward voltage
reverse voltage
reverse current
diode capacitance
I
F
= 50 mA
I
R
= 10
A
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
s
21
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
s
21
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
L
charge carrier life time
50
PARAMETER
CONDITIONS
MIN.
BAP50-05W
TYP.
MAX.
UNIT
0.95
0.45
0.35
0.3
25
14
3
19
15.7
13.5
1.84
1.90
1.92
1.08
1.13
1.17
0.26
0.30
0.36
1.05
1.1
100
0.6
0.5
40
25
5
V
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
L
S
Note
series inductance
1.6
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Apr 17
3
NXP Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP50-05W
handbook, halfpage
10
3
MLD605
handbook, halfpage
600
Cd
MLD606
rD
(Ω)
10
2
(fF)
400
10
200
1
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
C.
f = 1 MHz; T
j
= 25
C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD607
(1)
21
(dB)
−1
handbook, halfpage
s
2
0
MLD608
(2)
21
(dB)
−5
(3)
−2
−10
−3
−15
−4
−20
−5
0.5
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(1) I
F
= 10 mA.
(2) I
F
= 1 mA.
(3) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
C.
Fig.4
Insertion loss
s
21
2
of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (s
21
2
) of the diode in off-state as a
function of frequency; typical values.
2001 Apr 17
4
NXP Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BAP50-05W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2001 Apr 17
5
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