DISCRETE SEMICONDUCTORS
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M3D102
BAP64-06W
Silicon PIN diode
Product specification
Supersedes data of 2001 Feb 02
2001 Apr 17
NXP Semiconductors
Product specification
Silicon PIN diode
FEATURES
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz.
APPLICATIONS
RF attenuators and switches.
DESCRIPTION
Two planar PIN diodes in common anode configuration in
a SOT323 small SMD plastic package.
1
Top view
2
MGU320
BAP64-06W
PINNING
PIN
1
2
3
DESCRIPTION
cathode 1
cathode 2
common connection
handbook, halfpage
3
3
2
1
Marking code:
V4-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
C
65
65
100
100
240
+150
+150
V
mA
mW
C
C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Apr 17
2
NXP Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
Per diode
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 50 mA
V
R
= 100 V
V
R
= 20 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
s
21
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
s
21
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
PARAMETER
CONDITIONS
BAP64-06W
TYP.
MAX.
UNIT
0.95
0.52
0.37
0.23
20
10
2
0.7
18.5
13.5
10.9
1.86
2.06
2.23
1.01
1.06
1.10
0.19
0.21
0.27
0.08
0.10
0.16
1.55
1.1
10
1
0.35
40
20
3.8
1.35
V
A
A
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
L
S
Note
series inductance
1.6
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Apr 17
3
NXP Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP64-06W
handbook, halfpage
10
3
MLD596
handbook, halfpage
600
Cd
MLD597
rD
(Ω)
10
2
(fF)
400
10
200
1
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
C.
f = 1 MHz; T
j
= 25
C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD598
21
(dB)
−1
(1)
(2)
(3)
handbook, halfpage
s
2
0
MLD599
21
(dB)
−5
(4)
−2
−10
−3
−15
−4
−20
−5
0.5
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
Diode inserted in series with a 50
stripline circuit
and biased via the analyzer Tee network; T
amb
= 25
C.
Fig.4
Insertion loss (s
21
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (s
21
2
) of the diode as a function
of frequency; typical values.
2001 Apr 17
4
NXP Semiconductors
Product specification
Silicon PIN diode
BAP64-06W
handbook, halfpage
150
MLD600
IP2
(dB)
100
1800 MHz
900 MHz
50
0
10
−1
1
IF (mA)
10
T
amb
= 25
C;
typical values.
Fig.6
Second order intercept point as a function of
forward current; typical values.
2001 Apr 17
5
Embedded System
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