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BAS16V-TP

Description
DIODE ARRAY GP 75V 200MA SOT563
Categorysemiconductor    Discrete semiconductor   
File Size315KB,3 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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BAS16V-TP Overview

DIODE ARRAY GP 75V 200MA SOT563

BAS16V-TP Parametric

Parameter NameAttribute value
Diode configuration2 freestanding
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)75V
Current - average rectification (Io) (per diode)200mA
Voltage at different If - Forward (Vf1.25V @ 150mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)4ns
Current at different Vr - Reverse leakage current1µA @ 75V
Operating Temperature - Junction-65°C ~ 150°C
Installation typesurface mount
Package/casingSOT-563,SOT-666
Supplier device packagingSOT-563
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAS16V
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Lead Free Plating
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Rating
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Forward Continuous Current
Power dissipation
Thermal Resistance Junction to Ambient
Peak forward surge current @=1.0us
@=1.0s
Storage Temperature
Rating
100
75
200
300
150
833
2.0
1.0
-65 to +150
Unit
V
V
mA
mA
mW
/W
A
150mW
Switching Diodes
Maxim um Ratings
Symbol
V
RM
V
RRM
V
RWM
V
R
I
O
I
FM
P
D
R
©
JA
I
FSM
T
STG
SOT-563
A
B C
D
G
K
H
M
L
DIMENSIONS
INCHES
MM
MAX
.011
.049
.067
MIN
0.15
1.10
1.55
0.50
.043
.067
.023
.011
.007
0.90
1.50
0.56
0.10
0.10
1.10
1.70
0.60
0.30
0.18
MAX
0.30
1.25
1.70
NOTE
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)
I
R
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage
Current
Forward Voltage
Total Capacitance
Reverse Recovery Time
Min
75V
Max
25nA
1­A
715mV
855mV
1000mV
1250mV
2pF
4ns
Test Conditions
I
R
=100­A
V
R
=20V
V
R
=75V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHZ
I
rr
=1mA,I
R
=I
F
=10mA,
R
L
=100¡
V
F
C
T
t
rr
DIM
A
B
C
D
G
H
K
L
M
MIN
.006
.043
.061
.020
.035
.059
.022
.004
.004
Revision:
C
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