PHB101NQ04T
N-channel TrenchMOS standard level FET
Rev. 02 — 10 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
General industrial applications
Motors, lamps and solenoids
Uninterruptible power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
40
75
157
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 32 V; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 9;
see
Figure 10
-
12.6
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
6.6
8
mΩ
NXP Semiconductors
PHB101NQ04T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
2
1
3
Simplified outline
[1]
mb
Graphic symbol
D
G
mbb076
S
SOT404
(D2PAK)
[1]
It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
PHB101NQ04T
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Version
SOT404
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
40
40
20
71
75
240
157
175
175
75
240
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
non-repetitive
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 45 A; V
sup
≤
55 V;
drain-source avalanche unclamped; t
p
= 0.17 ms; R
GS
= 50
Ω
energy
PHB101NQ04T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2009
2 of 12
NXP Semiconductors
PHB101NQ04T
N-channel TrenchMOS standard level FET
120
Ider
(%)
80
03aq90
120
P
der
(%)
80
03aa16
40
40
0
0
0
50
100
150
200
Tmb (°C)
0
50
100
150
T
mb
(°C)
200
Fig 2.
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Normalized total power dissipation as a
function of mounting base temperature
10
3
ID
(A)
Limit RDSon = VDS / ID
tp = 10
μ
s
10
2
100
μ
s
03aq92
DC
10
1 ms
10 ms
100 ms
1
1
10
V DS (V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHB101NQ04T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2009
3 of 12
NXP Semiconductors
PHB101NQ04T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
0.95
Unit
K/W
thermal resistance from see
Figure 4
junction to mounting
base
thermal resistance from mounted on a printed-circuit board;
junction to ambient
vertical in still air;
R
th(j-a)
-
50
-
K/W
1
03aq91
Zth(j-mb)
(K/W)
δ
= 0.5
0.2
0.1
10
-1
0.05
0.02
single pulse
P
δ
=
tp
T
tp
T
10
-2
10
-4
10
-3
10
-2
10
-1
t p (s)
t
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHB101NQ04T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2009
4 of 12
NXP Semiconductors
PHB101NQ04T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 7;
see
Figure 8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 7;
see
Figure 8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 7;
see
Figure 8
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 9;
see
Figure 10
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 9;
see
Figure 10
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C
see
Figure 13
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 25 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 12
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
T
j
= 25 °C; see
Figure 11
-
-
-
-
-
-
-
-
-
-
-
-
-
36.6
9.8
12.6
2020
485
215
20
51
51
33
0.85
53
44
-
-
-
-
-
-
-
-
-
-
1.2
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
Min
36
40
-
1
2
-
-
-
-
-
-
Typ
-
-
-
-
3
-
-
2
2
-
6.6
Max
-
-
4.4
-
4
1
500
100
100
15.2
8
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
PHB101NQ04T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2009
5 of 12
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