RMB2S - RMB6S
Taiwan Semiconductor
0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery
Surface Mount Bridge Rectifier
FEATURES
● Ideal for automated placement
● Reliable low cost construction utilizing molded plastic
technique
● High surge current capability
● Small size, simple installation
● UL Recognized File # E-326243
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
0.8
200 - 600
30
150
UNIT
A
V
A
°C
TO-269AA (MBS)
Quad
APPLICATIONS
● Switching mode power supply (SMPS)
● Lighting application
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: TO-269AA (MBS)
Molding compound meets UL 94V-0 flammability rating
Part No. with suffix “H” means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.12g (approximately)
TO-269AA (MBS)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Maximum average forward current 60Hz sine wave
resistance load on glass-expoxy P.C.B.
Maximum average forward current 60Hz sine wave
resistance load on aluminum substrate
Surge peak forward current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Rating for fusing (t<8.3ms)
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
0.8
I
FSM
It
T
J
T
STG
1
2
SYMBOL
RMB2S
RMB2S
200
140
200
RMB4S
RMB4S
400
280
400
0.5
RMB6S
RMB6S
600
420
600
UNIT
V
V
V
A
A
A
As
°C
°C
2
30
3.74
- 55 to +150
- 55 to +150
Version:G1708
RMB2S - RMB6S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance per diode
SYMBOL
R
ӨJA
LIMIT
85
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 0.4A, T
J
= 25°C
(2)
SYMBOL
V
F
I
R
C
J
t
rr
TYP
-
-
-
13
-
MAX
1
5
100
-
150
UNIT
V
µA
µA
pF
ns
Reverse current @ rated V
R
per diode
Junction capacitance
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
I
F
=0.5A,I
R
=1.0A
I
RR
=0.25A
ORDERING INFORMATION
PART NO.
RMBxS
PART NO.
SUFFIX(*)
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
MBS
PACKING
3,000 / 13" Paper reel
RC
G
H
(Note 1, 2)
Notes:
1. "x" defines voltage from 200V (RMB2S) to 600V (RMB6S)
2. Whole series with green compound (halogen-free)
*: Optional available
EXAMPLE
EXAMPLE P/N
RMB2SHRCG
PART NO.
RMB2S
PART NO.
SUFFIX
H
PACKING
CODE
RC
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
AEC-Q101 qualified
2
Version:G1708
RMB2S - RMB6S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
1
AVERAGE FORWARD CURRENT (A)
Fig.2 Typical Junction Capacitance
30
25
CAPACITANCE (pF)
0.8
Aluminum Substrate
0.6
20
15
10
5
0
f=1.0MHz
Vsig=50mVp-p
0.4
Glass Epoxy P.C.B.
0.2
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE (
o
C)
0.1
1
10
REVERSE VOLTAGE (V)
100
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
10
10
Fig.4 Typical Forward Characteristics
10
T
J
=125°C
1
UF1DLW
T
J
=125°C
1
1
0.01
Pulse width
0.001
0.1
0.2
0.3
0.4
0.4
0.5
0.6
0.6
0.8
0.7
1
0.8
1.2
0.9
1
1.4
1.1
1.6
1.2
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:G1708
(A)
0.1
T
J
=25°C
RMB2S - RMB6S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
35
PEAK FORWARD SURGE CURRENT (A)
30
25
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
4
Version:G1708
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