product is not designed protection against radioactive rays
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TSZ02201-0R2R0G100680-1-2
24.Apr.2014 Rev.001
BR25G640-3
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Supply Voltage
Symbol
V
CC
Ratings
-0.3 to +6.5
0.45 (SOP8)
0.45 (SOP-J8)
0.33 (TSSOP-B8)
0.31 (MSOP8)
0.30 (VSON008X2030)
- 65 to +150
- 40 to +85
- 0.3 to Vcc+1.0
150
-4000 to +4000
Unit
V
Remarks
Datasheet
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
Power Dissipation.
Pd
W
When using at Ta=25°C or higher 3.3mW to be reduced per 1°C.
When using at Ta=25°C or higher 3.1mW to be reduced per 1°C.
When using at Ta=25°C or higher 3.0mW to be reduced per 1°C.
Storage Temperature
Operating Temperature
Input Voltage /
Output Voltage
Junction Temperature
Electrostatic discharge
voltage
(human body model)
Tstg
Topr
‐
Tjmax
V
ESD
°C
°C
V
°C
V
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not under -1.0V.
Junction temperature at the storage condition
Caution:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V)
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Embedded System
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