BUK7237-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 9 July 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
=10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
V
32.3 A
77
W
Static characteristics
R
DSon
V
GS
=10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 12;
see
Figure 13
V
GS
=10 V; I
D
= 25 A;
T
j
=25 °C; see
Figure 13;
see
Figure 12
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
=14 A; V
sup
≤ 55 V;
drain-source
R
GS
= 50 Ω; V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
-
-
49
mJ
-
-
74
mΩ
-
31
37
mΩ
Nexperia
BUK7237-55A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7237-55A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BUK7237-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 9 July 2010
2 of 13
Nexperia
BUK7237-55A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
=100 °C; V
GS
= 10 V; see
Figure 1
T
mb
=25 °C; V
GS
=10 V; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
[1]
Max
55
55
20
22.8
32.3
129
77
175
175
32.3
129
49
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
=25 °C; t
p
≤ 10 µs; pulsed;
see
Figure 3
T
mb
=25 °C; see
Figure 2
-
-
-55
-55
Source-drain diode
T
mb
= 25 °C
t
p
≤ 10 µs; pulsed; T
mb
= 25 °C
I
D
=14 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
=10 V; T
j(init)
= 25 °C; unclamped
-
-
-
Avalanche ruggedness
Peak drain current is limited by chip, not package.
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03aa16
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK7237-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 9 July 2010
3 of 13
Nexperia
BUK7237-55A
N-channel TrenchMOS standard level FET
10
3
ID
(A)
10
2
03nb97
R
DSon
= V
DS
/ I
D
t
p
= 10
µs
100
µs
D.C.
t
p
T
t
10
P
δ
=
t
p
T
1 ms
10 ms
100 ms
10
V
DS
(V)
10
2
1
1
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
1.9
Unit
K/W
R
th(j-a)
minimum footprint; FR4 board
-
71.4
-
K/W
10
Z
th(j-mb)
(K/W)
03nb96
1
δ
= 0.5
0.2
0.1
10
−1
0.05
0.02
Single Shot
10
−2
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7237-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 9 July 2010
4 of 13
Nexperia
BUK7237-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
=0.25 mA; V
GS
=0 V; T
j
= 25 °C
I
D
=0.25 mA; V
GS
=0 V; T
j
= -55 °C
I
D
=1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
I
D
=1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
D
=1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
=55 V; V
GS
=0 V; T
j
= 25 °C
V
DS
=55 V; V
GS
=0 V; T
j
= 175 °C
V
DS
=0 V; V
GS
=20 V; T
j
= 25 °C
V
DS
=0 V; V
GS
=-20 V; T
j
= 25 °C
V
GS
=10 V; I
D
=25 A; T
j
= 175 °C;
see
Figure 12;
see
Figure 13
V
GS
=10 V; I
D
=25 A; T
j
= 25 °C;
see
Figure 13;
see
Figure 12
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from drain lead from package to centre
of die ; T
j
= 25 °C
from source lead to source bond pad ;
T
j
= 25 °C
I
S
=15 A; V
GS
=0 V; T
j
= 25 °C;
see
Figure 15
I
S
=20 A; dI
S
/dt = -100 A/µs;
V
GS
=-10 V; V
DS
=30 V; T
j
= 25 °C
V
DS
=30 V; R
L
= 1.2 Ω; V
GS
= 10 V;
R
G(ext)
= 10 Ω; T
j
= 25 °C
V
GS
=0 V; V
DS
=25 V; f =1 MHz;
T
j
=25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
650
170
110
10
62
24
20
2.5
7.5
872
205
153
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
Min
55
50
2
-
1
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
2
-
31
Max
-
-
4
4.4
-
10
500
100
100
74
37
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
40
80
1.2
-
-
V
ns
nC
BUK7237-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 9 July 2010
5 of 13
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