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BUK7230-55A,118

Description
MOSFET N-CH 55V 38A DPAK
CategoryDiscrete semiconductor    The transistor   
File Size726KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK7230-55A,118 Overview

MOSFET N-CH 55V 38A DPAK

BUK7230-55A,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeDPAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT428
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)58 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)38 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)150 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK7230-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 16 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1
and
3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
55
38
88
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 44 V; see
Figure 14
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
and
12
-
9
-
nC
I
D
= 34 A; V
sup
55 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
58
mJ
Static characteristics
R
DSon
drain-source
on-state resistance
-
26
30
mΩ
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