SP001646670
BGSX22G2A10
DPDT Antenna Cross Switch
Features
RF CMOS DPDT antenna cross switch with power handling
capability of up to 36.5 dBm
Suitable for multi-mode LTE and WCDMA multi antenna
applications
Ultra-low insertion loss and harmonics generation
0.1 to 6.0 GHz coverage
High port-to-port-isolation
No decoupling capacitors required if no DC applied on RF lines
General Purpose Input-Output (GPIO) Interface
Small form factor 1.15mm x 1.55mm
No power supply blocking required
High EMI robustness
RoHS and WEEE compliant package
Description
The BGSX22G2A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This
DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports.
The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 2.3V to
3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology,
external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The
BGSX22G2A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of
GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
The device has a very small size of only 1.15 x 1.55mm2 and a maximum thickness of 0.6mm.
Datasheet Summary
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
page 1 of 2
V 1.4
2017-07-12
BGSX22G2A10
DPDT Antenna Cross Switch
Block diagram and ordering information
Block diagram and ordering information
Figure 1
Table 1
Type
BGSX22G2A10
BGSX22G2A10 Block diagram
Ordering Information
Package
ATSLP-10-2
Marking
XB
Trademarks
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Edition 2017-07-12
Published by
Infineon Technologies AG
81726 München, Germany
© 2017 Infineon Technologies AG.
All Rights Reserved.
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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