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BFP 540F E6327

Description
TRANSISTOR RF NPN 4.5V TSFP-4
Categorysemiconductor    Discrete semiconductor   
File Size258KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BFP 540F E6327 Overview

TRANSISTOR RF NPN 4.5V TSFP-4

BFP 540F E6327 Parametric

Parameter NameAttribute value
Transistor typeNPN
Voltage - collector-emitter breakdown (maximum)5V
Frequency - Transition30GHz
Noise figure (dB, typical values ​​at different f)0.9dB ~ 1.4dB @ 1.8GHz
Gain20dB
Power - Max250mW
DC current gain (hFE) at different Ic, Vce (minimum value)50 @ 20mA,3.5V
Current - Collector (Ic) (Maximum)80mA
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casing4-SMD, flat leads
Supplier device packaging4-TSFP
BFP540F
NPN Silicon RF Transistor
For highest gain low noise amplifier
at 1.8 GHz
Outstanding
G
ms
= 20 dB
Noise Figure
F
= 0.9 dB
Gold metallization for high reliability
SIEGET
to p v ie w
4
3
3
4
XYs
2
1
TSFP-4
45 - Line
A T s
1
2
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFP540F
Marking
ATs*
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
TSFP-4
*
Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
80°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
Symbol
R
thJS
Value
280
Unit
K/W
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
4.5
14
14
1
80
8
250
150
-65 ... 150
-65 ... 150
mW
°C
mA
Unit
V
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Jan-28-2004
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