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FS225R12KE3BOSA1

Description
MOD IGBT MED PWR ECONOPP-1
CategoryDiscrete semiconductor    The transistor   
File Size576KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

FS225R12KE3BOSA1 Overview

MOD IGBT MED PWR ECONOPP-1

FS225R12KE3BOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-XUFM-X29
Contacts29
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionISOLATED
Maximum collector current (IC)325 A
Collector-emitter maximum voltage1200 V
Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X29
Number of components6
Number of terminals29
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)810 ns
Nominal on time (ton)400 ns
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS225R12KE3
-EconoPACK™+ModulmitTrench/FeldstopIGBT3undHighEfficiencyDiode
-EconoPACK™+withtrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

V
CES

1200
225
325
450
1150
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,0







typ.
1,70
2,00
5,8
2,10
3,3
16,0
0,75


0,25
0,30
0,09
0,10
0,55
0,65
0,13
0,16
max.
2,15
6,5




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 225 A, V
GE
= 15 V
I
C
= 225 A, V
GE
= 15 V
I
C
= 9,00 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 225 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 3,3
I
C
= 225 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 3,3
I
C
= 225 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 3,3
I
C
= 225 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 3,3
I
C
= 225 A, V
CE
= 600 V, L
S
= 80 nH
V
GE
= ±15 V
R
Gon
= 3,3
I
C
= 225 A, V
CE
= 600 V, L
S
= 80 nH
V
GE
= ±15 V
R
Goff
= 3,3
V
GE
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on

15,0

E
off
I
SC
R
thJC
R
thCH
T
vj op




-40
36,0


t
P
10 µs, T
vj
= 125°C
900

0,047

A
0,11 K/W
K/W
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:MB
approvedby:WR
dateofpublication:2013-10-02
revision:3.1
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