NSVJ6904DSB6
Advance Information
N-Channel JFET
−25
V, 20 to 40 mA, 40 mS, Dual
The NSVJ6904DSB6 is a composite type of JFET designed for
compact size and high efficiency which can achieve high gain
performance. This AEC−Q101 qualified and PPAP capable device is
suited for automotive applications.
Features
V
DSS
60 V
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R
DS
(on) MAX
78 mW @ 10 V
104 mW @ 4.5 V
I
D
MAX
4.5 A
•
•
•
•
•
•
Large | yfs |
Small Ciss
Ultralow Noise Figure
CPH6 Package is Pin−Compatible with SC−74
AEC−Q101 Qualified and PPAP Capable
Mounting Area is Greatly Reduced by Incorporating Two JFETs of
the NSVJ3910SB3 in One Package of CPH6 Compared with Using
Two Separate Packages
ELECTRICAL CONNECTION
N−Channel
6
5
4
1 : Drain 1
2 : NC
3 : Drain 2
4 : Gate 2
5 : Source 1 / Source 2
6 : Gate 1
1
2
3
Typical Applications
•
AM Tuner RF Amplification
•
Low Noise Amplifier
Specifications
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C)
Parameter
Drain to Source Voltage
Gate to Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation 1 unit
Total Power Dissipation
Symbo
l
V
DSX
V
GDS
I
G
I
D
P
D
P
T
Value
25
−25
10
50
400
700
−55
to +150
Unit
V
V
mA
mA
mW
mW
°C
12
3
MARKING
DIAGRAM
CPH6
CASE 318BD
Operating Junction and Storage Temperature T
J,
T
Stg
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 4 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2017
March, 2018
−
Rev. P1
1
Publication Order Number:
NSVJ6904DSB6/D
1P
4
LOT No
65
NSVJ6904DSB6
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, (Note 1))
Characteristic
Gate to Drain Breakdown Voltage
Gate to Source Leakage Current
Cutoff Voltage
Zero−Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Symbol
V
(BR)GDS
I
GSS
V
GS(off)
I
DSS
| yfs |
Ciss
Crss
NF
V
DS
= 5 V, V
GS
= 0 V, f = 100 MHz
Conditions
I
G
=
−10
mA,
V
DS
= 0 V
V
GS
=
−10
V, V
DS
= 0 V
V
DS
= 5 V, I
D
= 100
mA
V
DS
= 5 V, V
GS
= 0 V
V
DS
= 5 V, V
GS
= 0 V, f = 1 kHz
V
DS
= 5 V, V
GS
= 0 V, f = 1 MHz
Min
−25
−
−0.6
20
30
−
−
−
Typ
−
−
−1.2
−
40
6.0
2.3
2.1
Max
−
−1.0
−1.8
40
−
−
−
2.8
Unit
V
nA
V
mA
mS
pF
pF
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. The specifications shown above are for each individual JFET.
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2
NSVJ6904DSB6
CHARACTERISTICS
30
V
GS
= 0 V
DRAIN CURRENT, I
D
−
mA
DRAIN CURRENT, I
D
−
mA
25
20
15
10
5
0
0
−1.0
V
−0.2
V
40
35
30
25
20
15
10
5
2.0
0
0
2
4
6
8
DRAIN−TO−SOURCE VOLTAGE, V
DS
−
V
10
−0.4
V
−0.6
V
−0.8
V
−1.0
V
V
GS
= 0 V
−0.2
V
−0.4
V
−0.6
V
−0.8
V
0.5
1.0
1.5
DRAIN−TO−SOURCE VOLTAGE, V
DS
−
V
Figure 1. I
D
−
V
DS
50
45
DRAIN CURRENT, I
D
−
mA
40
35
30
25
20
15
10
5
0
−2.0
−1.5
−1.0
−0.5
0
GATE−TO−SOURCE VOLTAGE, V
GS
−
V
0.5
20 mA
50
45
I
DSS
= 40 mA
30 mA
DRAIN CURRENT, I
D
−
mA
40
35
30
25
20
15
10
5
0
−2.0
Figure 2. I
D
−
V
DS
V
DS
= 5 V
V
DS
= 5 V
Ta =
−25°C
25°C
75°C
−1.5
−1.0
−0.5
0
GATE−TO−SOURCE VOLTAGE, V
GS
−
V
0.5
Figure 3. I
D
−
V
GS
FORWARD TRANSFER ADMITTANCE, | yfs |
−
mS
FORWARD TRANSFER ADMITTANCE, | yfs |
−
mS
100
7
5
3
2
10
7
5
3
2
1.0
1.0
2
3
5 7 10
2 3
DRAIN CURRENT, I
D
−
mA
5
7 100
100
7
5
Figure 4. I
D
−
V
GS
V
DS
= 5 V
f = 1 kHz
I
DSS
= 30 mA
V
DS
= 5 V
V
GS
= 0 V
f = 1 kHz
3
2
10
10
2
3
5
7
DRAIN CURRENT, I
DSS
−
mA
100
Figure 5. | yfs |
−
I
D
Figure 6. | yfs |
−
I
DSS
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3
NSVJ6904DSB6
CHARACTERISTICS
10
CUTOFF VOLTAGE, V
GS
(off)
−
V
7
5
3
2
1.0
7
5
3
2
0.1
10
2
3
5
DRAIN CURRENT, I
DSS
−
mA
7
10
INPUT CAPACITANCE, Ciss
−
pF
7
5
V
DS
= 5 V
I
D
= 100
mA
V
GS
= 0 V
f = 1 MHz
3
2
100
1.0
1.0
2 3
5 7 10
2 3
5 7 100
DRAIN−TO−SOURCE VOLTAGE, V
DS
−
V
Figure 7. V
GS
(off)
−
I
DSS
10
7
5
ALLOWABLE POWER DISSIPATION, P
D
, P
T
−
mW
REVERSE TRANSFER CAPACITANCE, Crss
−
pF
800
700
600
500
400
300
200
100
0
0
20
1 unit
Figure 8. Ciss
−
V
GDS
V
GS
= 0 V
f = 1 MHz
P
T
3
2
1.0
1.0
2 3
5 7 10
2 3
5 7 100
DRAIN−TO−SOURCE VOLTAGE, V
DS
−
V
40
60
80
100 120 140
AMBIENT TEMPERATURE, Ta
−
°C
160
Figure 9. Crss
−
V
DS
Figure 10. P
D
, P
T
−
Ta
ORDERING INFORMATION
Device Order Number
NSVJ6904DSB6T1G
Specific Device Marking
1P
Package Type
CPH6
(Pb−Free
/ Halogen Free)
Shipping
†
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
CPH6
CASE 318BD
ISSUE O
DATE 30 NOV 2011
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
©
Semiconductor Components Industries, LLC, 2002
Case Outline Number:
http://onsemi.com
October,
DESCRIPTION: CPH6
2002
−
Rev. 0
PAGE 1 OF
XXX
2
1
DOCUMENT NUMBER:
98AON65440E
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