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SFF1607G C0G

Description
DIODE GEN PURP 500V 16A ITO220AB
Categorysemiconductor    Discrete semiconductor   
File Size393KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SFF1607G C0G Overview

DIODE GEN PURP 500V 16A ITO220AB

SFF1607G C0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)500V
Current - average rectification (Io)16A
Voltage at different If - Forward (Vf1.7V @ 8A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current10µA @ 500V
Capacitance at different Vr, F50pF @ 4V,1MHz
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingITO-220AB
Operating Temperature - Junction-55°C ~ 150°C
SFF1601G thru SFF1608G
Taiwan Semiconductor
CREAT BY ART
Isolated Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF.
- High current capavility
- High reliability
- High surge current capability
- Low power loss.
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - (green compound) halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 8 A
Maximum reverse current @ Rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
T
STG
80
1.5
- 55 to +150
- 55 to +150
0.975
10
400
35
50
O
SFF
50
35
50
SFF
100
70
100
SFF
150
105
150
SFF
200
140
200
16
125
SFF
300
210
300
SFF
400
280
400
SFF
500
350
500
SFF
600
420
600
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
UNIT
V
V
V
A
A
1.3
1.7
V
μA
ns
pF
C/W
O
O
C
C
Document Number: DS_D1405031
Version: H14
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