MCP1661
High-Voltage Integrated Switch PWM Boost Regulator with UVLO
Features
•
•
•
•
36V, 800 m Integrated Switch
Up to 92% Efficiency
High Output Voltage Range: up to 32V
1.3A Peak Input Current Limit:
- I
OUT
> 200 mA @ 5.0V V
IN
, 12V V
OUT
- I
OUT
> 125 mA @ 3.3V V
IN
, 12V V
OUT
- I
OUT
> 100 mA @ 4.2V V
IN
, 24V V
OUT
Input Voltage Range: 2.4V to 5.5V
Undervoltage Lockout (UVLO):
- UVLO @ V
IN
Rising: 2.3V, typical
- UVLO @ V
IN
Falling: 1.85V, typical
No Load Input Current: 250 µA, typical
Sleep mode with 200 nA Typical Quiescent
Current
PWM Operation with Skip mode: 500 kHz
Feedback Voltage Reference: V
FB
= 1.227V
Cycle-by-Cycle Current Limiting
Internal Compensation
Inrush Current Limiting and Internal Soft Start
Output Overvoltage Protection (OVP) in the event
of:
- Feedback pin shorted to GND
- Disconnected feedback divider
Overtemperature Protection
Easily Configurable for SEPIC or Flyback
Topologies
Available Packages:
- 5-Lead SOT-23
- 8-Lead 2x3 TDFN
General Description
The MCP1661 device is a compact, high-efficiency,
fixed-frequency, non-synchronous step-up DC-DC
converter which integrates a 36V, 800 m NMOS
switch. It provides a space-efficient high-voltage
step-up power supply solution for applications powered
by either two-cell or three-cell alkaline, Ultimate Lithium,
NiCd, NiMH, one-cell Li-Ion or Li-Polymer batteries.
The integrated switch is protected by the 1.3A
cycle-by-cycle inductor peak current limit operation.
There is an output overvoltage protection which turns
off switching in case the feedback resistors are
accidentally disconnected or the feedback pin is
short-circuited to GND.
Low-voltage technology allows the regulator to start-up
without high inrush current or output voltage overshoot
from a low-voltage input. The device features a UVLO
which avoids start-up and operation with low inputs or
discharged batteries for two cell-powered applications.
For standby applications (EN = GND), the device stops
switching, enters Sleep mode and consumes 200 nA
(typical) of input current.
MCP1661 is easy to use and allows creating classic
boost, SEPIC or flyback DC-DC converters within a
small Printed Circuit Board (PCB) area. All
compensation and protection circuitry is integrated to
minimize the number of external components. Ceramic
input and output capacitors are used.
•
•
•
•
•
•
•
•
•
•
•
•
•
Package Types
MCP1661
SOT-23
SW 1
GND 2
V
FB
3
MCP1661
2x3 TDFN*
V
FB
1
S
GND
2
SW 3
NC 4
EP
9
8 EN
7 P
GND
6 NC
5 V
IN
4 EN
5 V
IN
Applications
• Two and Three-Cell Alkaline, Lithium Ultimate and
NiMH/NiCd Portable Products
• Single-Cell Li-Ion to 5V, 12V or 24V Converters
• LCD Bias Supply for Portable Applications
• Camera Phone Flash
• Portable Medical Equipment
• Hand-Held Instruments
• Single-Cell Li-Ion to 3.0V or 3.3V SEPIC
Applications (see
Figure 6-3)
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2014-2015 Microchip Technology Inc.
DS20005315B-page 1
MCP1661
Typical Applications
L
4.7 μH
D
PMEG2005
V
OUT
12V, 75 mA-125 mA
V
IN
2.4V
-3.0V
+
ALKALINE
C
IN
4.7-10 μF
V
IN
SW
R
TOP
1.05 M
Ω
R
BOT
120 k
Ω
MCP1661
V
FB
EN
ON
OFF
C
OUT
4.7-10 μF
-
GND
V
FB
= 1.227V
+
ALKALINE
-
L
10 μH
D
MBR0540
V
OUT
24V, 50 mA-125 mA
V
IN
3.0V
- 4.2V
+
ALKALINE
C
IN
10 μF
V
IN
SW
R
TOP
1.05 M
Ω
R
BOT
56 k
Ω
MCP1661
V
FB
EN
C
OUT
10 μF
-
GND
+
ALKALINE
-
300
250
I
OUT
(mA)
200
150
100
50
0
2.4
2.8
3.2
3.6
V
IN
(V)
4
4.4
4.8
V
OUT
= 24V
V
OUT
= 12V
Maximum Output Current vs. V
IN
DS20005315B-page 2
2014-2015 Microchip Technology Inc.
MCP1661
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
V
SW
– GND .....................................................................+36V
EN, V
IN
– GND...............................................................+6.0V
V
FB
.................................................................................+1.3V
Power Dissipation ....................................... Internally Limited
Storage Temperature .................................... -65
°
C to +150
°
C
Ambient Temperature with Power Applied .... -40
°
C to +125
°
C
Operating Junction Temperature................... -40
°
C to +150
°
C
ESD Protection On All Pins:
HBM ................................................................. 4 kV
MM ..................................................................300V
DC AND AC CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, all limits apply for typical values at ambient temperature
T
A
= +25°C, V
IN
= 3.3V, I
OUT
= 20 mA, V
OUT
= 12V, C
IN
= C
OUT
= 10 µF, X7R ceramic, L = 4.7 µH.
Boldface
specifications apply over the controlled T
A
range of -40°C to +125°C.
Parameters
Input Voltage Range
Undervoltage Lockout
(UVLO)
Sym.
V
IN
UVLO
START
UVLO
STOP
Output Voltage Adjust Range
Maximum Output Current
V
OUT
I
OUT
Min.
2.4
—
—
—
—
Typ.
—
2.3
1.85
—
125
200
100
Feedback Voltage
V
FB
Accuracy
Feedback Input Bias Current
No Load Input Current
Shutdown Quiescent Current
I
VFB
I
IN0
I
QSHDN
V
FB
1.190
-3
—
—
—
1.227
—
0.005
250
200
Max.
5.5
—
—
32
—
—
—
1.264
3
—
—
—
Units
V
V
V
V
mA
mA
mA
V
%
µA
µA
nA
Device switching, no load,
3.3V V
IN
, 12V V
OUT
(Note
2)
EN = GND,
feedback divider current not
included (Note
3)
Note 4
V
IN
= V
SW
= 5V; V
OUT
= 5.5V
V
EN
= V
FB
= GND
V
IN
= 5V, V
OUT
= 12V,
I
OUT
= 100 mA (Note
4)
Note 1
V
IN
rising,
I
OUT
= 1 mA resistive load
V
IN
falling,
I
OUT
= 1 mA resistive load
Note 1
3.3V V
IN
, 12V V
OUT
5.0V V
IN
, 12V V
OUT
4.2V V
IN
, 24V V
OUT
Conditions
Peak Switch Current Limit
NMOS Switch Leakage
NMOS Switch ON Resistance
Note 1:
I
N(MAX)
I
NLK
R
DS(ON)
—
—
—
1.3
0.4
0.8
—
—
—
A
µA
2:
3:
4:
Minimum input voltage in the range of V
IN
(V
IN
< 5.5V < V
OUT
) depends on the maximum duty cycle
(DC
MAX
) and on the output voltage (V
OUT
), according to the boost converter equation:
V
INmin
= V
OUT
x (1 – DC
MAX
).
I
IN0
varies with input and output voltage (Figure
2-8).
I
IN0
is measured on the V
IN
pin when the device is
switching (EN = V
IN
), at no load, with R
TOP
= 120 k and R
BOT
= 1.05 M.
I
QSHDN
is measured on the V
IN
pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (R
TOP
+ R
BOT
) disconnected from V
OUT
.
Determined by characterization, not production tested.
2014-2015 Microchip Technology Inc.
DS20005315B-page 3
MCP1661
DC AND AC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise specified, all limits apply for typical values at ambient temperature
T
A
= +25°C, V
IN
= 3.3V, I
OUT
= 20 mA, V
OUT
= 12V, C
IN
= C
OUT
= 10 µF, X7R ceramic, L = 4.7 µH.
Boldface
specifications apply over the controlled T
A
range of -40°C to +125°C.
Parameters
Line Regulation
Load Regulation
Overvoltage Reference
Maximum Duty Cycle
Switching Frequency
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
Soft-Start Time
Thermal Shutdown
Die Temperature
Die Temperature Hysteresis
Note 1:
Sym.
|(V
FB
/V
FB
)/
V
IN
|
|V
FB
/V
FB
|
OVP_REF
DC
MAX
f
SW
V
IH
V
IL
I
ENLK
t
SS
T
SD
T
SDHYS
Min.
—
—
—
88
425
85
—
—
—
—
—
Typ.
0.05
0.5
80
90
500
—
—
0.025
3
150
15
Max.
0.5
1.5
—
—
575
—
7.5
—
—
—
—
Units
%/V
%
mV
%
kHz
Conditions
V
IN
= 3V to 5V,
I
OUT
= 20 mA, V
OUT
= 12.0V
I
OUT
= 20 mA to 100 mA,
V
IN
= 3.3V, V
OUT
= 12.0V
V
FB
to GND transition
(Note
4)
Note 4
±15%
% of V
IN
I
OUT
= 1 mA
% of V
IN
I
OUT
= 1 mA
µA
ms
°C
°C
V
EN
= 5V
T
A
, EN Low-to-High,
90% of V
OUT
2:
3:
4:
Minimum input voltage in the range of V
IN
(V
IN
< 5.5V < V
OUT
) depends on the maximum duty cycle
(DC
MAX
) and on the output voltage (V
OUT
), according to the boost converter equation:
V
INmin
= V
OUT
x (1 – DC
MAX
).
I
IN0
varies with input and output voltage (Figure
2-8).
I
IN0
is measured on the V
IN
pin when the device is
switching (EN = V
IN
), at no load, with R
TOP
= 120 k and R
BOT
= 1.05 M.
I
QSHDN
is measured on the V
IN
pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (R
TOP
+ R
BOT
) disconnected from V
OUT
.
Determined by characterization, not production tested.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Unless otherwise specified, all limits apply for typical values at ambient temperature
T
A
= +25°C, V
IN
= 3.3V, I
OUT
= 20 mA, V
OUT
= 12V, C
IN
= C
OUT
= 10 µF, X7R ceramic, L = 4.7 µH and 5-lead
SOT-23 package.
Boldface
specifications apply over the controlled T
A
range of -40°C to +125°C.
Parameters
Temperature Ranges
Operating Junction Temperature
Range
Storage Temperature Range
Maximum Junction Temperature
Package Thermal Resistances
Thermal Resistance, 5LD-SOT-23
Thermal Resistance, 8LD-2x3 TDFN
JA
JA
—
—
201.0
52.5
—
—
°C/W
°C/W
T
J
T
A
T
J
-40
-65
—
—
—
—
+125
+150
+150
°C
°C
°C
Transient
Steady State
Sym.
Min.
Typ.
Max.
Units
Conditions
DS20005315B-page 4
2014-2015 Microchip Technology Inc.
MCP1661
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
IN
= 3.3V, I
OUT
= 20 mA, V
OUT
= 12V, C
IN
= C
OUT
= 10 µF, X7R ceramic,
L = 4.7 µH, T
A
= 25°C, 5-lead SOT-23 package.
2.3
UVLO Thresholds (V)
2.2
2.1
2
1.9
1.8
1.7
-40 -25 -10
5 20 35 50 65 80 95 110 125
Ambient Temperature (°C)
UVLO Stop
UVLO Start
100
90
Efficiency (%)
80
70
60
50
40
30
20
0.1
1
10
I
OUT
(mA)
100
1000
V
IN
= 2.3V
V
IN
= 3.0V V
IN
= 4.0V
V
OUT
= 9.0V
L = 4.7 μH
V
IN
= 5.5V
FIGURE 2-1:
Undervoltage Lockout
(UVLO) vs. Ambient Temperature.
1.230
Feedback Voltage (V)
FIGURE 2-4:
I
OUT
.
100
90
Efficiency (%)
9.0V V
OUT
Efficiency vs.
V
OUT
= 12.0V
L = 4.7 μH
V
IN
= 4.0V
V
IN
= 5.5V
1.225
80
70
60
50
40
30
V
IN
= 2.3V
V
IN
= 3.0V
1.220
1.215
1.210
-40 -25 -10
5 20 35 50 65 80 95 110 125
Ambient Temperature (°C)
20
0.1
1
10
I
OUT
(mA)
100
1000
FIGURE 2-2:
V
FB
Voltage vs. Ambient
Temperature and V
IN.
1000
900
800
700
I
OUT
(mA)
600
500
400
300
200
100
0
2.3
2.7
3.1
3.5
3.9 4.3
V
IN
(V)
4.7
V
OUT
= 24V
V
OUT
= 9.0V
V
OUT
= 12V
V
OUT
= 6.0V
L = 4.7 μH, V
OUT
= 6V, 9V and 12V
L = 10 μH, V
OUT
= 24V
FIGURE 2-5:
I
OUT
.
100
90
Efficiency (%)
80
70
60
50
40
30
20
0.1
1
V
OUT
= 24.0V
L = 10 μH
12.0V V
OUT
Efficiency vs.
V
IN
= 5.5V
V
IN
= 3.0V
V
IN
= 4.0V
5.1
5.5
10
I
OUT
(mA)
100
1000
FIGURE 2-3:
vs. V
IN
.
Maximum Output Current
FIGURE 2-6:
I
OUT
.
24.0V V
OUT
Efficiency vs.
2014-2015 Microchip Technology Inc.
DS20005315B-page 5
京公网安备 11010802033920号
EEWORLD
