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TSM2301CX RFG

Description
MOSFET P-CHANNEL 20V 2.8A SOT23
Categorysemiconductor    Discrete semiconductor   
File Size300KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

TSM2301CX RFG Overview

MOSFET P-CHANNEL 20V 2.8A SOT23

TSM2301CX RFG Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C2.8A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)2.5V,4.5V
Rds On (maximum value) when different Id, Vgs130 milliohms @ 2.8A, 4.5V
Vgs (th) (maximum value) when different Id950mV @ 250µA
Gate charge (Qg) at different Vgs (maximum value)4.5nC @ 4.5V
Vgs (maximum value)±8V
Input capacitance (Ciss) at different Vds (maximum value)447pF @ 6V
FET function-
Power dissipation (maximum)900mW(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingSOT-23
Package/casingTO-236-3,SC-59,SOT-23-3
TSM2301
20V P-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
-20
130 @ V
GS
= -4.5V
190 @ V
GS
= -2.5V
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
I
D
(A)
-2.8
-2.0
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
Load Switch
PA Switch
Ordering Information
Part No.
TSM2301CX RFG
Package
SOT-23
Packing
3Kpcs / 7” Reel
Note:
“G” denotes for Halogen Free
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
tR
Parameter
eco
mm
Symbol
V
DS
V
GS
I
D
I
DM
a,b
en
d
I
S
P
D
T
J
T
J
, T
STG
Ta = 25°C
Ta = 75°C
ed
P-Channel MOSFET
Limit
-20
±8
-2.8
-8
-0.72
0.9
0.57
+150
- 55 to +150
Unit
V
V
A
A
A
W
°C
°C
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
5 sec.
c. Surface Mounted on FR4 Board,
No
Symbol
T
L
JA
Limit
5
120
Unit
S
°C/W
Document Number: DS_P0000258
1
Version: B15
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